KSK596
Part | Datasheet |
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KSK596ABU (pdf) |
Related Parts | Information |
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KSK596PAWD |
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KSK596PBWD |
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KSK596BBU |
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KSK596BU |
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KSK596CBU |
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KSK596PCWD |
PDF Datasheet Preview |
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KSK596 KSK596 Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic TO-92S 1.Source Gate Drain Si N-channel Junction FET Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VGDO IG ID PD TJ TSTG Gate-Drain Voltage Gate Current Drain Current Power Dissipation Junction Temperature Storage Temperature Ratings -20 10 1 100 150 -55 ~ 150 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVGDO VGS off IDSS lYFSl Ciss Crss Gate-Drain Breakdown Voltage Gate-Source Cut-off Voltage Drain Current Forward Transfer Admittance Input Capacitance Output Capacitance IG= -100uA VDS=5V, ID=1µA VDS=5V, VGS=0 VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz IDSS Classification Classification IDSS µA A 100 ~ 170 B 150 ~ 240 C 210 ~ 350 2002 Fairchild Semiconductor Corporation Typical Characteristics ID[µA], DRAIN CURRENT ID[mA], DRAIN CURRENT 500 450 400 350 300 250 200 150 100 IDSS = 200µA VGS = 0 VGS = -0.1V VGS = -0.2V VGS = -0.3V VGS = -0.4V |
More datasheets: 73L-II420 | 73L-II020 | 73G-II020 | LX7188ILU-TR | KPT7A20-41PEW | KSK596PAWD | KSK596PBWD | KSK596BBU | KSK596BU | KSK596CBU |
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