KSE3055T
KSE3055T Datasheet
KSE3055T
| Part | Datasheet |
|---|---|
KSE3055T |
KSE3055T (pdf) |
| Related Parts | Information |
|---|---|
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KSE3055TTU |
KSE3055TTU |
| PDF Datasheet Preview |
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| KSE3055T KSE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product fT = 2MHz Min. TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector -Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TC=25°C Collector Dissipation Ta=25°C Junction Temperature Storage Temperature Value 70 60 5 10 6 75 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO ICEO ICEX1 ICEX2 Collector-Emitter Breakdown Voltage Collector Cut-off Current Collector Cut-off Current IEBO hFE Emitter Cut-off Current *DC Current Gain VCE sat *Collector-Emitter Saturation Voltage VBE on *Base-Emitter On Voltage Current Gain Bandwidth Product * Pulse test duty Pulse IC = 200mA, IB = 0 VCE = 30V, IB = 0 VCE = 70V, VBE off = -1.5V VCE = 70V, VBE off = -1.5V TC = 150°C VEB = 5V, IC = 0 VCE = 4V, IC = 4A VCE = 4V, IC = 10A IC = 4A, IB = 0.4A IC = 10A, IB = 3.3A VCE = 4V, IC = 4A VCE = 10V, IC = 500mA Min. 60 Max. 700 1 5 |
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