KSE2955TTU

KSE2955TTU Datasheet

KSE2955T

Part	Datasheet
KSE2955TTU	KSE2955TTU (pdf)

Related Parts	Information
KSE2955T	KSE2955T

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KSE2955T KSE2955T General Purpose and Switching Applications • DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product fT = 2MHz Min. TO-220 1.Base 2.Collector 3.Emitter PNP Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TC=25°C Collector Dissipation Ta=25°C Junction Temperature Storage Temperature Value - 70 - 60 -5 - 10 -6 75 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO ICEO ICEX1 ICEX2 Collector- Emitter Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current IEBO hFE Emitter Cut-off Current * DC Current Gain VCE sat * Collector-Emitter Saturation Voltage VBE on * Base-Emitter On Voltage Current Gain Bandwidth Product * Pulse test duty Pulse IC= - 200mA, IB = 0 VCE = - 30V, IB = 0 VCE = - 70V, VBE off = 1.5V VCE = - 70V, VBE off = 1.5V TC = 150°C VEB = - 5V, IC = 0 VCE = - 4V, IC = - 4A VCE = - 4V, IC = - 10A IC = - 4A, IB = - 0.4A IC = - 10A, IB = - 3.3A VCE = - 4V, IC = - 4A VCE = - 10V, IC = - 500mA Min. -60 Max. -700 -1 -5 Units V µA mA -5 mA 20 100 5 2000 Fairchild Semiconductor International KSE2955T 100µs Typical Characteristic hFE, DC CURRENT GAIN

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KSE2955T

KSE2955T

General Purpose and Switching Applications
• DC Current Gain Specified to IC = 10 A
• High Current Gain Bandwidth Product fT = 2MHz Min.

TO-220
1.Base 2.Collector 3.Emitter

PNP Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC IB PC

TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TC=25°C Collector Dissipation Ta=25°C Junction Temperature Storage Temperature

Value - 70 - 60 -5 - 10 -6 75 150 - 55 ~ 150

Units V A W °C °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCEO ICEO ICEX1 ICEX2

Collector- Emitter Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current

IEBO hFE

Emitter Cut-off Current * DC Current Gain

VCE sat
* Collector-Emitter Saturation Voltage

VBE on
* Base-Emitter On Voltage

Current Gain Bandwidth Product
* Pulse test duty Pulse

IC= - 200mA, IB = 0 VCE = - 30V, IB = 0 VCE = - 70V, VBE off = 1.5V VCE = - 70V, VBE off = 1.5V TC = 150°C

VEB = - 5V, IC = 0

VCE = - 4V, IC = - 4A VCE = - 4V, IC = - 10A IC = - 4A, IB = - 0.4A IC = - 10A, IB = - 3.3A VCE = - 4V, IC = - 4A VCE = - 10V, IC = - 500mA

Min. -60

Max.
-700 -1 -5

Units V µA mA
-5 mA
20 100 5
2000 Fairchild Semiconductor International

KSE2955T
100µs

Typical Characteristic
hFE, DC CURRENT GAIN

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Datasheet ID: KSE2955TTU 634253