KSE200STSTU
KSE200STSTU Datasheet
KSE200
| Part | Datasheet |
|---|---|
KSE200STSTU |
KSE200STSTU (pdf) |
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| KSE200 KSE200 • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product fT=65MHz IC=100mA Min. • Complement to KSE210 TO-126 Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO ICBO IEBO hFE VCE sat VBE sat VBE on fT Cob Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance IC=10mA, IB=0 VCB=40V, IE=0 VCB=40V, IE=0 TJ=125°C VBE=8V, IC=0 VCE=1V, IC=500mA VCE=1V, IC=2A VCE=2V, IC=5A IC=500mA, IB=50mA IC=2A, IC=200mA IC=5A, IB=1A IC=5A, IB=1A VCE=1V, IC=2A VCE=10V, IC=100mA VCB=10V, IE=0, f=0.1MHz Value 40 25 8 5 15 150 - 65 ~ 150 Units V A W °C °C Min. 25 70 45 10 Max. Units V nA µA nA V MHz pF 2001 Fairchild Semiconductor Corporation Typical Characteristics hFE, DC CURRENT GAIN |
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