KSD362RTU

KSD362RTU Datasheet

KSD362

Part	Datasheet
KSD362RTU	KSD362RTU (pdf)

Related Parts	Information
KSD362N	KSD362N
KSD362R	KSD362R

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KSD362 KSD362 B/W TV Horizontal Deflection Output • Collector-Base Voltage VCBO=150V • Collector Current IC=5A • Collector Dissipation PC=40W TC=25°C TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE VCE sat VBE sat fT Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product IC = 1mA, IE = 0 IC = 2mA, RBE = ∞ IE = 1mA, IC = 0 VCB = 100V, IE = 0 VCE = 5V, IC = 5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A VCE = 5V, IC = 0.5A hFE Classification Classification hFE N 20 ~ 50 R 40 ~ 80 Value 150 70 8 5 40 150 - 55 ~ 150 Units V A W °C °C Min. 150 70 Typ. 10 Max. 20 140 Units V µA V MHz O 70 ~ 140 2000 Fairchild Semiconductor International Typical Characteristics IC[A], COLLECTOR CURRENT I = 50mA 45mA = 40mA IB = 35mA I = 30mA B I = 25mA B IB = 20mA I = 15mA B

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KSD362

KSD362

B/W TV Horizontal Deflection Output
• Collector-Base Voltage VCBO=150V
• Collector Current IC=5A
• Collector Dissipation PC=40W TC=25°C

TO-220
1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO hFE VCE sat VBE sat fT

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product

IC = 1mA, IE = 0 IC = 2mA, RBE = ∞ IE = 1mA, IC = 0 VCB = 100V, IE = 0 VCE = 5V, IC = 5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A VCE = 5V, IC = 0.5A
hFE Classification

Classification hFE

N 20 ~ 50

R 40 ~ 80

Value 150 70
8 5 40 150 - 55 ~ 150

Units V A W °C °C

Min. 150 70

Typ. 10

Max.
20 140

Units V µA

V MHz

O 70 ~ 140
2000 Fairchild Semiconductor International

Typical Characteristics

IC[A], COLLECTOR CURRENT

I = 50mA
45mA = 40mA

IB = 35mA

I = 30mA B

I = 25mA B

IB = 20mA

I = 15mA B

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Datasheet ID: KSD362RTU 634244