KSC5025OTU

KSC5025OTU Datasheet

KSC5025

Part	Datasheet
KSC5025OTU	KSC5025OTU (pdf)

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KSC5025 KSC5025 High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO VCEX sus Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 5A, IB1 = -IB2 = 2A L = 500µH, Clamped ICBO IEBO hFE1 hFE2 VCE sat VBE sat Cob fT tON tSTG tF Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1.2A VCE = 5V, IC = 6A IC = 6A, IB = 1.2A IC = 6A, IB = 1.2A VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 1.2A VCC = 200V IC = 5IB1 = 5I B2 = 7A RL = hFE Classificntion Classification hFE1 R 15 ~ 30 O 20 ~ 40 Value 800 500 7 15 25 4 100 150 - 55 ~ 150 Units V A W °C °C Min. 800 500 7 500 Typ. Max. Units V Y 30 ~ 50 2002 Fairchild Semiconductor Corporation Typical Characteristics

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KSC5025

KSC5025

High Voltage and High Reliabilty
• High Speed Switching
• Wide SOA

TO-3P
1.Base 2.Collector 3.Emitter

NPN Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC ICP IB PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO VCEX sus

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage

IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 5A, IB1 = -IB2 = 2A L = 500µH, Clamped

ICBO IEBO hFE1 hFE2 VCE sat VBE sat Cob fT tON tSTG tF

Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time

VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1.2A VCE = 5V, IC = 6A

IC = 6A, IB = 1.2A

IC = 6A, IB = 1.2A

VCB = 10V, IE = 0, f = 1MHz

VCE = 10V, IC = 1.2A

VCC = 200V IC = 5IB1 = 5I B2 = 7A RL =
hFE Classificntion

Classification hFE1

R 15 ~ 30

O 20 ~ 40

Value 800 500
7 15 25 4 100 150 - 55 ~ 150

Units V A W °C °C

Min. 800 500
7 500

Typ.

Max.

Units V

Y 30 ~ 50
2002 Fairchild Semiconductor Corporation

Typical Characteristics

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Datasheet ID: KSC5025OTU 634219