KSC4010OTU

KSC4010OTU Datasheet

KSC4010

Part	Datasheet
KSC4010OTU	KSC4010OTU (pdf)

Related Parts	Information
KSC4010RTU	KSC4010RTU

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KSC4010 KSC4010 Audio Power Amplifier • High Current Capability IC=6A • High Power Dissipation • Wide S.O.A • Complement to KSA3010 TO-3P 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition ICBO IEBO BVCEO hFE VCE sat VBE on fT Cob Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance VCB= 120V, IE= 0 VEB= 5V, IC= 0 IC= 5A,, IB= 0 VCE= 5V, IC= 1A, IC= 5A, IB= 0.5A VCE= 5V, IC= 5A VCE= 5V, IC= 1A VCB=10V, IE=0, f=1MHz hFE Classification Classification hFE R 55 ~ 110 Value 120 5 6 12 60 150 - 50 ~ 150 Units V A W °C °C Min. - 120 55 - Typ. 30 90 Max. 10 160 - Units µA µA V V MHz pF O 80 ~ 160 2001 Fairchild Semiconductor Corporation KSC4010 10ms Typical Characteristics IC A , COLLECTOR CURRENT IB=10IB0=m9A0IBm=A80IBm=A70mIB=A60mA IB=50mA Ib=40mA 6 IB=30mA 5 IB=20mA IB=10mA

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KSC4010

KSC4010

Audio Power Amplifier
• High Current Capability IC=6A
• High Power Dissipation
• Wide S.O.A
• Complement to KSA3010

TO-3P
1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC ICP PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Collector Dissipation TC=25°C Junction Temperature Storage Temperature

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

ICBO IEBO BVCEO hFE VCE sat VBE on fT Cob

Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance

VCB= 120V, IE= 0 VEB= 5V, IC= 0 IC= 5A,, IB= 0 VCE= 5V, IC= 1A, IC= 5A, IB= 0.5A VCE= 5V, IC= 5A VCE= 5V, IC= 1A VCB=10V, IE=0, f=1MHz
hFE Classification

Classification hFE

R 55 ~ 110

Value 120
5 6 12 60 150 - 50 ~ 150

Units V A W °C °C

Min. -
120 55 -

Typ. 30 90

Max. 10 160 -

Units µA µA V

V MHz pF

O 80 ~ 160
2001 Fairchild Semiconductor Corporation

KSC4010
10ms

Typical Characteristics

IC A , COLLECTOR CURRENT

IB=10IB0=m9A0IBm=A80IBm=A70mIB=A60mA

IB=50mA

Ib=40mA
6 IB=30mA
5 IB=20mA

IB=10mA

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Datasheet ID: KSC4010OTU 634217