KSC3953DSTU

KSC3953DSTU Datasheet

KSC3953

Part	Datasheet
KSC3953DSTU	KSC3953DSTU (pdf)

Related Parts	Information
KSC3953CSTU	KSC3953CSTU
KSC3953DS	KSC3953DS
KSC3953CS	KSC3953CS

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KSC3953 KSC3953 CRT Display Video Output TO-126 Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted BVCBO BVEBO ICBO IEBO hFE1 hFE2 VCE sat VBE sat fT Cob Cre Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC = 10µA, IB = 0 IC = 1mA, RBE = ∞ IE = 100µA, IC = 0 VCB = 80V, IE = 0 VEB = 2V, IC = 0 VCE = 10V, IC = 10mA VCE = 10V, IC = 100mA IC = 30mA, IB = 3mA IC = 30mA, IB = 3mA VCE = 10V,IC = 50mA VCB = 30V, f = 1MHz VCB = 30V, f = 1MHz hFE Classificntion Classification hFE1 C 40 ~ 80 Value 120 3 200 400 8 150 - 55 ~ 150 Units V mA W °C °C Min. 120 40 20 Typ. Max. Units V µA µA D 60 ~ 120 2000 Fairchild Semiconductor International KSC3953 Typical Characteristics IC[mA], COLLECTOR CURRENT 100 80 60 40 20 0 IB = 0.9mA IB = 0.8mA IB = 0.7mA IB = 0.6mA IB = 0.5mA IB = 0.4mA IB = 0.3mA IB = 0.2mA IB = 0.1mA IB = 0 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure Static Characteristic

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KSC3953

KSC3953

CRT Display Video Output

TO-126

Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC ICP PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature

Electrical Characteristics TC=25°C unless otherwise noted

BVCBO BVEBO ICBO IEBO hFE1 hFE2 VCE sat VBE sat fT Cob Cre

Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Test Condition

IC = 10µA, IB = 0 IC = 1mA, RBE = ∞ IE = 100µA, IC = 0 VCB = 80V, IE = 0 VEB = 2V, IC = 0 VCE = 10V, IC = 10mA VCE = 10V, IC = 100mA IC = 30mA, IB = 3mA IC = 30mA, IB = 3mA VCE = 10V,IC = 50mA VCB = 30V, f = 1MHz VCB = 30V, f = 1MHz
hFE Classificntion

Classification hFE1

C 40 ~ 80

Value 120
3 200 400
8 150 - 55 ~ 150

Units V mA W °C °C

Min. 120
40 20

Typ.

Max.

Units V µA µA

D 60 ~ 120
2000 Fairchild Semiconductor International

KSC3953

Typical Characteristics

IC[mA], COLLECTOR CURRENT
100 80 60 40 20 0

IB = 0.9mA

IB = 0.8mA IB = 0.7mA

IB = 0.6mA IB = 0.5mA IB = 0.4mA

IB = 0.3mA IB = 0.2mA

IB = 0.1mA

IB = 0

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure Static Characteristic

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Datasheet ID: KSC3953DSTU 634216