KSC3569
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KSC3569YTU (pdf) |
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KSC3569 KSC3569 High Speed Switching Application NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current DC *Collector Current Pulse Base Current Collector Dissipation TC=25°C Junction Temperature TSTG Storage Temperature * Duty TO-220F 1.Base 2.Collector 3.Emitter Value 500 400 7 2 4 1 15 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition VCEO sus VCEX sus 1 Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage VCEX sus 2 Collector-Emitter Sustaining Voltage ICBO ICER Collector Cut-off Current Collector Cut-off Current ICEX1 ICEX2 Collector Cut-off Current Collector Cut-off Current IEBO Emitter Cut-off Current hFE1 hFE2 * DC Current Gain VCE sat * Collector-Emitter Saturation Voltage |
More datasheets: SOMAM3517-10-1780RJXR | SOMXAM3517-10-1780FJCR | SOMAM3517-10-1780FJCR | SOMAM3517-10-1780FJIR | SOMAM3517-10-1780RJCR | ICS853016AGLF | 853016AMLFT | 853016AMLF | 853016AGLFT | ICS9LPRS419DFLFT |
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