KSC3552NTU

KSC3552NTU Datasheet

KSC3552

Part	Datasheet
KSC3552NTU	KSC3552NTU (pdf)

Related Parts	Information
KSC3552OTU	KSC3552OTU
KSC3552RTU	KSC3552RTU

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KSC3552 KSC3552 High Voltage and High Reliabilty • High Speed Switching • Wide SOA NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature TO-3P 1.Base 2.Collector 3.Emitter Value 1100 800 7 12 30 6 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO VCEX sus Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 6A, IB1 = -IB2 = 1.2A L = 500µH, Clamped ICBO IEBO hFE1 hFE2 VCE sat VBE sat Cob fT tON tSTG tF Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.8A VCE = 5V, IC = 4A IC = 6A, IB = 1.2A IC = 6A, IB = 1.2A VCB = 10V, f = 1MHz VCE = 10V, IC = 0.8A VCC = 400V 51B1 = -2.5I B2 = IC = 8A RL = Min. 1100 800 7 800 Typ. Max. Units V hFE Classificntion Classification hFE N 10 ~ 20 R 15 ~ 30 O 20 ~ 40 2001 Fairchild Semiconductor Corporation Typical Characteristics

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KSC3552

KSC3552

High Voltage and High Reliabilty
• High Speed Switching
• Wide SOA

NPN Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC ICP IB PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature

TO-3P
1.Base 2.Collector 3.Emitter

Value 1100 800
7 12 30 6 150 - 55 ~ 150

Units V A W °C °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO VCEX sus

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage

IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 6A, IB1 = -IB2 = 1.2A L = 500µH, Clamped

ICBO IEBO hFE1 hFE2 VCE sat VBE sat Cob fT tON tSTG tF

Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time

VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.8A VCE = 5V, IC = 4A

IC = 6A, IB = 1.2A

IC = 6A, IB = 1.2A

VCB = 10V, f = 1MHz

VCE = 10V, IC = 0.8A

VCC = 400V 51B1 = -2.5I B2 = IC = 8A RL =

Min. 1100 800
7 800

Typ.

Max.

Units V
hFE Classificntion

Classification hFE

N 10 ~ 20

R 15 ~ 30

O 20 ~ 40
2001 Fairchild Semiconductor Corporation

Typical Characteristics

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Datasheet ID: KSC3552NTU 634214