KSC3233
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KSC3233DTF (pdf) |
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KSC3233 KSC3233 High Speed Switching • Low Collector-Emitter Saturation Voltage • High speed Switching tF=1µs Max. IC=0.8A • Collector-Emitter Voltage VCEO=400V • Lead formed for Surface Mount Applications D-PAK, “ -D “ Suffix I-PAK Base Collector Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TC=25°C Collector Dissipation Ta=25°C Junction Temperature Storage Temperature Value 500 400 7 2 20 1 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO ICBO IEBO hFE1 hFE2 VCE sat VBE sat tON tSTG tF Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time IC = 1mA, IE = 0 IC = 10mA, IB = 0 VCB = 400V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 1A IC = 1A, IB = 0.2A IC = 1A, IB = 0.2A VCC = 200V, IC= 0.8A 1B1 = -I B2 = 0.08A RL = Min. 500 400 Max. 100 1 Units V µA mA 2001 Fairchild Semiconductor Corporation Typical Characteristics IC[A], COLLECTOR CURRENT IB = 180mA IB = 120mA IB = 80mA IB = 60mA IB = 40mA IB = 20mA IB = 10mA V [V], COLLECTOR-EMITTER VOLTAGE CE Figure Static Characteristic |
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