KSC3233DTF

KSC3233DTF Datasheet


KSC3233

Part Datasheet
KSC3233DTF KSC3233DTF KSC3233DTF (pdf)
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KSC3233

KSC3233

High Speed Switching
• Low Collector-Emitter Saturation Voltage
• High speed Switching tF=1µs Max. IC=0.8A
• Collector-Emitter Voltage VCEO=400V
• Lead formed for Surface Mount Applications D-PAK, “ -D “ Suffix

I-PAK

Base Collector Emitter

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC IB PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TC=25°C Collector Dissipation Ta=25°C Junction Temperature Storage Temperature

Value 500 400 7 2 20 1 150
- 55 ~ 150

Units V A W °C °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCEO ICBO IEBO hFE1 hFE2 VCE sat VBE sat tON tSTG tF

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time

IC = 1mA, IE = 0 IC = 10mA, IB = 0 VCB = 400V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 1A

IC = 1A, IB = 0.2A

IC = 1A, IB = 0.2A

VCC = 200V, IC= 0.8A 1B1 = -I B2 = 0.08A RL =

Min. 500 400

Max.
100 1

Units V µA mA
2001 Fairchild Semiconductor Corporation

Typical Characteristics

IC[A], COLLECTOR CURRENT

IB = 180mA

IB = 120mA

IB = 80mA

IB = 60mA

IB = 40mA

IB = 20mA

IB = 10mA

V [V], COLLECTOR-EMITTER VOLTAGE CE

Figure Static Characteristic
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Datasheet ID: KSC3233DTF 634211