KSC2982BTF
KSC2982BTF Datasheet
KSC2982 NPN Epitaxial Silicon Transistor
| Part | Datasheet |
|---|---|
KSC2982BTF |
KSC2982BTF (pdf) |
| Related Parts | Information |
|---|---|
KSC2982DTF |
KSC2982DTF |
KSC2982ATF |
KSC2982ATF |
KSC2982CTF |
KSC2982CTF |
| PDF Datasheet Preview |
|---|
| KSC2982 NPN Epitaxial Silicon Transistor July 2005 KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage VCE sat =0.5V • Collector Dissipation PC=1~2W in Mounted on Ceramic Board Marking SOT-89 Base Collector Emitter Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter VCBO VCES VCEO VEBO IC ICP IB IBP PC* TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current DC Collector Current Pulse * Base Current DC Base Current Pulse * Collector Power Dissipation Junction Temperature Storage Temperature * PW 10ms, Duty Cycle 30% Mounted on Ceramic Board 250mm2 x 0.8mm 29 PY Weekly code Year code hFE grage Value 30 10 6 2 4 500 1,000 150 -55 ~ 150 Units V A mW °C °C 2005 Fairchild Semiconductor Corporation KSC2982 NPN Epitaxial Silicon Transistor Electrical Characteristics Ta = 25°C unless otherwise noted Parameter Test Condition BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE sat VBE on fT Cob Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance IC = 10mA, IB = 0 IE = 1mA, IC = 0 VCB = 30V, IE = 0 VBE = 6V, IC = 0 VCE = 1V, IC = 0.5A VCE = 1V, IC = 2A IC = 2A, IB = 50mA VCE = 1V, IC = 2A VCE = 1V, IC = 2A VCB = 10V, IE = 0, f = 1MHz Min. 140 70 Typ. 140 150 27 Max. 100 600 Units V MHz pF hFE Classification Classification hFE1 Package Marking and Ordering Information Device Marking Device Package Reel Size 2982 KSC2982 SOT-89 13” Tape Width Quantity 4,000 KSC2982 NPN Epitaxial Silicon Transistor Typical Performance Characteristics hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT Figure Static Characteristic 60mA IB 25mA IB = 15mA IB = 10mA IB = 5mA Figure DC Current Gain 1,000 VCE=1V IB = 0mA VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure DCollector-Emitter Saturation Voltage Figure Base-Emitter On Voltage IC=10 IB PC[W], POWER DISSIPATION VCE sat [V], SATURATION VOLTAGE IC[A], COLLECTOR CURRENT Figure Safe Operating Area Mounted on Ceramic Board 250mm 2x 0.8mm TC[oC], CASE TEMPERATURE Figure Power Derating IC[A], COLLECTOR CURRENT 10 IC MAX. Pulse IC MAX. DC 10ms 100ms TSAin=g2l5eoCPulse |
| More datasheets: 10026694-006 | KT05-1A-40L-SMD | 9142083011 | 9142083117 | 9142083111 | 9142083116 | 9142083016 | 9142083017 | DBMY17W2PNMK52 | KSC2982DTF |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived KSC2982BTF Datasheet file may be downloaded here without warranties.