KSC2881OTF
KSC2881OTF Datasheet
KSC2881 NPN Epitaxial Silicon Transistor
| Part | Datasheet |
|---|---|
KSC2881OTF |
KSC2881OTF (pdf) |
| Related Parts | Information |
|---|---|
KSC2881YTF |
KSC2881YTF |
| PDF Datasheet Preview |
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| KSC2881 NPN Epitaxial Silicon Transistor July 2005 KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage VCEO=120V • Current Gain Bandwidth Productor fT=120MHz • Collector Dissipation PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking SOT-89 Base Collector Emitter 28 PY Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature TSTG Storage Temperature * Mounted on Ceramic Board 250mm2 x 0.8mm Electrical Characteristics Ta = 25°C unless otherwise noted Parameter Test Condition BVCEO BVEBO ICBO IEBO hFE VCE sat VBE on fT Cob Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance IC = 10µA, IB = 0 IE = 1mA, IC = 0 VCB = 120V, IE = 0 VBE = 5V, IC = 0 VCE = 5V, IC = 100mA IC = 500mA, IB = 50mA VCE = 5V, IC = 500mA VCE = 5V, IC = 100mA VCB = 10V, IE = 0, f = 1MHz Weekly code Year code hFE grage Value 5 800 160 500 1,000 150 -55 ~ 150 Units V mA mW °C °C Min. 120 5 Typ. Max. 100 240 Package Marking and Ordering Information Device Marking 2881 Device KSC2881 Package SOT-89 Reel Size 13” 120 ~ 240 Tape Width Quantity 4,000 KSC2881 NPN Epitaxial Silicon Transistor Typical Performance Characteristics Figure Static Characteristic IC [mA], COLLECTOR CURRENT IB = 50mA IB = 20mA IB = 10mA IB = 5mA IB = 3mA IB = 2mA IB = 1mA VCE[V], COLLECTOR-EMITTER VOLTAGE Figure DC Current Gain 1000 VCE = 5 V Figure Base-Emitter On Voltage IC [mA], COLLECTOR CURRENT VCE = 5V VBE[mV], SATURATION VOLTAGE Figure Collector-Emitter Saturation Voltage IC = 10 IB VCE sat [V], SATURATION VOLTAGE hFE, DC CURRENT GAIN 1000 IC[mA], COLLECTOR CURRENT Figure Power Derating PC [W], POWER DISSIPATION Mounted on Ceramic Board 250 mm2 x mm Ta [oC], AMBIENT TEMPERATURE |
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