KSC2786RTA

KSC2786RTA Datasheet

KSC2786

Part	Datasheet
KSC2786RTA	KSC2786RTA (pdf)

Related Parts	Information
KSC2786OTA	KSC2786OTA
KSC2786RBU	KSC2786RBU
KSC2786OBU	KSC2786OBU
KSC2786YTA	KSC2786YTA
KSC2786YBU	KSC2786YBU

PDF Datasheet Preview
KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product fT=600MHz TYP • High Power Gain GPE=22dB at f=100MHz NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted BVCBO BVCEO BVEBO ICBO IEBO hFE VBE on VCE sat fT Cob Cc•rbb’ Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Collector-Base Time Constant Test Condition IC=10µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IC=1mA VCB=6V, IE=0, f=1MHz VCE=6V, IC=1mA f=31.9MHz Noise Figure Power Gain VCE=6V, IC=1mA f=100MHz VCE=6V, IC=1mA f=100MHz TO-92S 1.Emitter Collector Base Value 30 20 4 20 250 150 -55 ~ 150 Units V mA mW °C °C Min. 30 20 4 Typ. 600 12 22 Max. Units V µA µA V MHz pF ps hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 2002 Fairchild Semiconductor Corporation Typical Characteristics IC [mA], COLLECTOR CURRENT IB = 110µA IB = 100µA IB = 90µA

PDF Datasheet Preview

KSC2786

KSC2786

TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator
• High Current Gain Bandwidth Product fT=600MHz TYP
• High Power Gain GPE=22dB at f=100MHz

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

Electrical Characteristics Ta=25°C unless otherwise noted

BVCBO BVCEO BVEBO ICBO IEBO hFE VBE on VCE sat fT Cob Cc•rbb’

Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Collector-Base Time Constant

Test Condition

IC=10µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IC=1mA VCB=6V, IE=0, f=1MHz VCE=6V, IC=1mA f=31.9MHz

Noise Figure

Power Gain

VCE=6V, IC=1mA f=100MHz

VCE=6V, IC=1mA f=100MHz

TO-92S
1.Emitter Collector Base

Value 30 20 4 20 250 150
-55 ~ 150

Units V mA
mW °C °C

Min. 30 20 4

Typ.
600 12 22

Max.

Units V µA µA

V MHz pF ps
hFE Classification

Classification hFE

R 40 ~ 80

O 70 ~ 140

Y 120 ~ 240
2002 Fairchild Semiconductor Corporation

Typical Characteristics

IC [mA], COLLECTOR CURRENT

IB = 110µA

IB = 100µA

IB = 90µA

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Datasheet ID: KSC2786RTA 634201