KSC2682OS
KSC2682OS Datasheet
KSC2682
| Part | Datasheet |
|---|---|
KSC2682OS |
KSC2682OS (pdf) |
| Related Parts | Information |
|---|---|
KSC2682YS |
KSC2682YS |
KSC2682YSTU |
KSC2682YSTU |
KSC2682OSTU |
KSC2682OSTU |
| PDF Datasheet Preview |
|---|
| KSC2682 KSC2682 Audio Frequency Power Amplifier • Complement to KSA1142 TO-126 Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition ICBO IEBO hFE1 hFE2 VCE sat VBE sat fT Cob Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance VCB = 180V, IE = 0 VEB = 3V, IC= 0 VCE = 5V, IC = 1mA VCE = 5V, IC = 10mA IC = 50mA, IB = 5mA IC = 50mA, IB = 5mA VCE = 10V, IC = 20mA VCB = 10V, IE = 0 f = 1MHz Noise Figure * Pulse Test Duty VCE = 10V, IC = 1mA RS = f = 1kHz hFE Classificntion Classification hFE2 O 100 ~ 200 Value 180 5 100 8 150 -55 ~ 150 Units V mA W °C °C Min. 90 100 Typ. 190 200 Max. Units µA µA Y 160 ~ 320 2000 Fairchild Semiconductor International Typical Characteristics Ic[mA], COLLECTOR CURRENT VCE sat , VBE sat [V], SATURATION VOLTAGE Pulse Test IB=500uA IB=450uA IB=400uA |
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