KSC2310OBU
KSC2310OBU Datasheet
KSC2310
| Part | Datasheet |
|---|---|
KSC2310OBU |
KSC2310OBU (pdf) |
| Related Parts | Information |
|---|---|
KSC2310YTA |
KSC2310YTA |
KSC2310YNBU |
KSC2310YNBU |
KSC2310YBU |
KSC2310YBU |
KSC2310RBU |
KSC2310RBU |
|
KSC2310RTA |
KSC2310RTA |
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KSC2310OTA |
KSC2310OTA |
| PDF Datasheet Preview |
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| KSC2310 KSC2310 High Voltage Power Amplifier • Collector-Base Voltage VCBO=200V • Current Gain Bandwidth Product fT=100MHz TO-92L Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 200 150 5 50 800 150 -55 ~ 150 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC=100µA, IE=0 IC=5mA, IB=0 IE=100µA, IC=0 VCB=200V, IE=0 VCE=5V, IC=10mA IC=10mA, IB=1mA VCE=30V, IC=10mA VCB=10V, IE=0, f=1MHz Min. 200 150 Typ. Max. Units V µA V MHz pF hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 2002 Fairchild Semiconductor Corporation Typical Characteristics IC[mA], COLLECTOR CURRENT 1000µA 500µA 400µA 300µA IB = 200µA 150µA 100µA |
| More datasheets: 943F4Y2D001330E | 943F4V2D1D0180E | 943F4V2D1C0330E | 943F4V2D1C0180E | 943F4Y2D1DO180E | MAX3280EAUK-T | KSC2310YTA | KSC2310YNBU | KSC2310YBU | KSC2310RBU |
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