KSC1187YBU
KSC1187YBU Datasheet
KSC1187
| Part | Datasheet |
|---|---|
KSC1187YBU |
KSC1187YBU (pdf) |
| Related Parts | Information |
|---|---|
|
KSC1187OTA |
KSC1187OTA |
|
KSC1187OBU |
KSC1187OBU |
|
KSC1187YTA |
KSC1187YTA |
| PDF Datasheet Preview |
|---|
| KSC1187 KSC1187 TV 1st, 2nd Picture IF Amplifier Forward AGC • High Current Gain Bandwidth Product fT=700MHz • High Power Gain GPE=24dB TYP. at f=45MHz TO-92 Emitter Base Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 20 4 30 250 150 -55 ~ 150 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE fT CRE GPE IC=10µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VCE=10V, IC=2mA VCE=10V, IC=3mA VCB=10V, IE=0, f=1MHz VCE=10V, IC=3mA f=45MHz VAGC AGC Voltage GR= 30dB, f=45MHz Min. 30 25 4 40 400 Typ. 700 24 Max. Units V µA MHz pF dB hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 2001 Fairchild Semiconductor Corporation KSC1187 Typical Characteristics IC[mA], COLLECTOR CURRENT IB = 100uA IB = 90uA |
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