KSB907TU
KSB907TU Datasheet
KSB907
| Part | Datasheet |
|---|---|
KSB907TU |
KSB907TU (pdf) |
| PDF Datasheet Preview |
|---|
| KSB907 KSB907 Power Amplifier Applications • High DC Current Gain • Low Collector-Emitter Saturation Voltage • Built-in Damper Diode at E-C • Darlington TR • Complement to KSD1222 I-PACK Base Collector Emitter PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Base Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature Value - 60 - 40 -5 -3 - 15 1 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO ICBO IEBO hFE1 hFE2 VCE sat VBE sat tON tSTG tF Collector- Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time IC = - 25mA, IB = 0 VCB = - 60V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 1A VCE = - 2V, IC = - 3A IC = - 2A, IB = - 4mA IC = - 2A, IB = - 4mA VCC = - 30V, IC = - 3A IB1 = - IB2 = - 6mA RL = Min. Typ. Max. Units - 20 µA - µA 2000 1000 2000 Fairchild Semiconductor International Typical Characteristics IC A , COLLECTOR CURRENT IB=-300uA IB=-275uA IB=-250uA IB=-225uA IB=-200uA IB=-175uA IB=0 |
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