KSB906YTU

KSB906YTU Datasheet

KSB906

Part	Datasheet
KSB906YTU	KSB906YTU (pdf)

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KSB906 KSB906 Low Frequency Power Amplifier • Low Collector- Emitter Saturation Voltage • Complement to KSD1221 I-PAK Base Collector Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TC=25°C Collector Dissipation Ta=25°C Junction Temperature Storage Temperature Value - 60 - 60 -7 -3 - 20 1 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO ICBO IEBO hFE1 hFE2 VCE sat VBE on fT Cob tON tSTG tF Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time IC = - 50mA, IB = 0 VCB = - 60V, IE = 0 VEB = - 7V, IC = 0 VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A IC = - 3A, IB = - 0.3A VCE = - 5V, IC = - 0.1A VCE = - 5V, IC = - 0.5A VCB = - 10V, f = 1MHz VCC = -30V, IC = - 1A IB1 = - IB2 = - 0.2A RL = Min. Typ. Max. Units - 100 µA - 100 µA hFE Classification Classification hFE O 60 ~ 120 Y 100 ~ 200 2001 Fairchild Semiconductor Corporation Typical Characteristics IC A , COLLECTOR CURRENT VCE SAT V , SATURATION VOLTAGE EMITTER COMMON TC=25℃ =-80mA IB=-70mA

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KSB906

KSB906

Low Frequency Power Amplifier
• Low Collector- Emitter Saturation Voltage
• Complement to KSD1221

I-PAK

Base Collector Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC IB PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TC=25°C Collector Dissipation Ta=25°C Junction Temperature Storage Temperature

Value - 60 - 60 -7 -3 -
20 1 150 - 55 ~ 150

Units V A W °C °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCEO ICBO IEBO hFE1 hFE2 VCE sat VBE on fT Cob tON tSTG tF

Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time

IC = - 50mA, IB = 0 VCB = - 60V, IE = 0 VEB = - 7V, IC = 0 VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A

IC = - 3A, IB = - 0.3A

VCE = - 5V, IC = - 0.1A

VCE = - 5V, IC = - 0.5A

VCB = - 10V, f = 1MHz

VCC = -30V, IC = - 1A IB1 = - IB2 = - 0.2A RL =

Min. Typ. Max. Units
- 100 µA
- 100 µA
hFE Classification

Classification hFE

O 60 ~ 120

Y 100 ~ 200
2001 Fairchild Semiconductor Corporation

Typical Characteristics

IC A , COLLECTOR CURRENT

VCE SAT V , SATURATION VOLTAGE

EMITTER COMMON

TC=25℃
=-80mA

IB=-70mA

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Datasheet ID: KSB906YTU 634176