KSB744/744A
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KSB744AYSTU (pdf) |
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KSB744YSTU |
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KSB744OSTU |
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KSB744/744A KSB744/744A Audio Frequency Power Amplifier • Complement to KSD794/KSD794A TO-126 Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage KSB744 KSB744A VEBO IC ICP IB PC TJ Emitter-Base Voltage Collector Current DC *Collector Current Pulse Base Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature TSTG Storage Temperature * Duty Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition ICBO IEBO hFE1 hFE2 VCE sat VBE sat fT Cob Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance * Pulse Test Duty Pulsed VCB = -45V, IE = 0 VEB = -3V, IC = 0 VCE = -5V, IC = -20mA VCE = -5V, IC = -0.5A IC = -1.5A, IC = -0.15A IC = -1.5A, IB = -0.15A VCE = -5V, IC = -0.1A VCB = -10V, IE = 0 f = 1MHz hFE Cassification Classification hFE2 R 60 ~ 120 O 100 ~ 200 Value -70 -45 -60 -5 -3 -5 1 10 150 -55 ~ 150 Units V A W °C °C Min. 30 60 Typ. 120 100 45 60 Max. -1 -1 Units µA µA Y 160 ~ 320 2000 Fairchild Semiconductor International Typical Characteristics |
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