KSA709
Part | Datasheet |
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KSA709CGTA (pdf) |
Related Parts | Information |
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KSA709GTA |
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KSA709CGBU |
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KSA709OTA |
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KSA709COBU |
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KSA709CYTA |
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KSA709CYBU |
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KSA709COTA |
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KSA709YTA |
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KSA709OBU |
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KSA709GBU |
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KSA709YBU |
PDF Datasheet Preview |
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KSA709 KSA709 High Voltage Amplifier • Collector-Base Voltage VCBO= -160V • Collector Power Dissipation PC=800mW • Complement to KSC1009 • Suffix “-C” means Center Collector Emitter Collector Base TO-92 Emitter Base Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -160 -150 -8 -700 800 150 -55 ~ 150 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current * DC Current Gain VCE sat * Collector-Emitter Saturation Voltage VBE sat * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance * Pulse Test Duty IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -100µA, IC=0 VCB= -100V, IE=0 VEB= -5V, IC=0 VCE= -2V, IC= -50mA IC= -200mA, IB= -20mA IC= -200mA, IB= -20mA VCE= -10V, IC= -50mA VCB= -10V, IE=0, f=1MHz Min. -160 -150 Typ. Max. Units V µA µA V MHz pF |
More datasheets: KSA709CGBU | KSA709OTA | KSA709COBU | KSA709CYTA | KSA709CYBU | KSA709COTA | KSA709YTA | KSA709OBU | KSA709GBU | KSA709YBU |
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