KSA1406CSTU

KSA1406CSTU Datasheet

KSA1406

Part	Datasheet
KSA1406CSTU	KSA1406CSTU (pdf)

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KSA1406 KSA1406 CRT Display, Video Output TO-126 Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature Ratings - 200 - 200 -4 - 100 - 200 7 150 - 55 ~ 150 Units V mA W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE Sat VBE Sat fT Cob Cre Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain IC = - 10µA, IB = 0 IC = - 1mA, RBE =∞ IE = - 100µA, IC = 0 VCB = - 150V, IC = 0 VBE = - 2V, IE = 0 VCE = - 10V, IC = - 10mA VCE = - 10V, IC = - 60mA IC = - 30mA, IC = - 3mA IC = - 30mA, IC = - 3mA VCE = - 30V, IC = - 30mA VCB = - 30V, f = 1MHz VCB = - 30V, f = 1MHz Min. - 200 - 200 40 20 Typ. Max. - - 120 Units V µA µA V MHz pF * hFE Classification Classification hFE1 C 40 ~ 80 D 60 ~ 120 2000 Fairchild Semiconductor International Typical Characteristics IC[A], COLLECTOR CURRENT -50 -40 -30 -20 -10 -0 -0 IB = -500uA IB = -450uA IB = -400uA IB = -350uA IB = -300uA IB = -250uA IB = -200uA IB = -150uA IB = -100uA IB = -50uA IB = 0uA VCE[V], COLLECTOR-EMITTER VOLTAGE

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KSA1406

KSA1406

CRT Display, Video Output

TO-126

Emitter 2.Collector 3.Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC ICP PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature

Ratings - 200 - 200 -4 - 100 - 200 7 150
- 55 ~ 150

Units V mA W °C °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE Sat VBE Sat fT Cob Cre

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

IC = - 10µA, IB = 0 IC = - 1mA, RBE =∞ IE = - 100µA, IC = 0 VCB = - 150V, IC = 0 VBE = - 2V, IE = 0 VCE = - 10V, IC = - 10mA VCE = - 10V, IC = - 60mA IC = - 30mA, IC = - 3mA IC = - 30mA, IC = - 3mA VCE = - 30V, IC = - 30mA VCB = - 30V, f = 1MHz VCB = - 30V, f = 1MHz

Min. - 200 - 200
40 20

Typ.

Max.
- - 120

Units V µA µA

V MHz pF
* hFE Classification

Classification hFE1

C 40 ~ 80

D 60 ~ 120
2000 Fairchild Semiconductor International

Typical Characteristics

IC[A], COLLECTOR CURRENT
-50 -40 -30 -20 -10
-0 -0

IB = -500uA

IB = -450uA IB = -400uA IB = -350uA IB = -300uA IB = -250uA IB = -200uA

IB = -150uA IB = -100uA

IB = -50uA

IB = 0uA

VCE[V], COLLECTOR-EMITTER VOLTAGE

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Datasheet ID: KSA1406CSTU 634156