KSA1175GBU

KSA1175GBU Datasheet

KSA1175

Part	Datasheet
KSA1175GBU	KSA1175GBU (pdf)

Related Parts	Information
KSA1175RTA	KSA1175RTA
KSA1175YTA	KSA1175YTA
KSA1175OTA	KSA1175OTA
KSA1175YBU	KSA1175YBU
KSA1175GTA	KSA1175GTA
KSA1175LTA	KSA1175LTA
KSA1175OBU	KSA1175OBU

PDF Datasheet Preview
KSA1175 Low Frequency Amplifier • Collector-Base Voltage VCBO= -60V • Complement to KSC2785 KSA1175 TO-92S 1.Emitter Collector Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -60 -50 -5 -150 250 150 -55 ~ 150 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat VBE on fT Cob NF Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -10µA, IC=0 VCB= -60V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -1mA IC= -100mA, IB= -10mA VCE= -6V, IE= -1mA VCE= -6V, IC= -10mA VCB= -10V, IE=0, f=1MHz VCE= -6V, IC= -0.3mA f=100Hz, Min. -60 -50 -5 Typ. Max. Units V µA µA V MHz pF dB hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 L 350 ~ 700 2002 Fairchild Semiconductor Corporation KSA1175 Typical Characteristics IC[mA], COLLECTOR CURRENT IB = -400µA IB = -350µA IB = -300µA IB = -250µA

PDF Datasheet Preview

KSA1175

Low Frequency Amplifier
• Collector-Base Voltage VCBO= -60V
• Complement to KSC2785

KSA1175

TO-92S
1.Emitter Collector Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

Ratings -60 -50 -5 -150 250 150
-55 ~ 150

Units V mA
mW °C °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat VBE on fT Cob NF

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure

IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -10µA, IC=0 VCB= -60V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -1mA IC= -100mA, IB= -10mA VCE= -6V, IE= -1mA VCE= -6V, IC= -10mA VCB= -10V, IE=0, f=1MHz VCE= -6V, IC= -0.3mA f=100Hz,

Min. -60 -50 -5

Typ.

Max.

Units V µA µA

V MHz pF dB
hFE Classification

Classification hFE

R 40 ~ 80

O 70 ~ 140

Y 120 ~ 240

G 200 ~ 400

L 350 ~ 700
2002 Fairchild Semiconductor Corporation

KSA1175

Typical Characteristics

IC[mA], COLLECTOR CURRENT

IB = -400µA

IB = -350µA

IB = -300µA

IB = -250µA

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived KSA1175GBU Datasheet file may be downloaded here without warranties.

Datasheet ID: KSA1175GBU 634146