ISL9N303AP3
ISL9N303AP3 Datasheet
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3
| Part | Datasheet |
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ISL9N303AP3 |
ISL9N303AP3 (pdf) |
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ISL9N303AS3 |
ISL9N303AS3 |
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ISL9N303AS3ST |
ISL9N303AS3ST |
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| ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 September 2002 PWM Optimized ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 N-Channel Logic Level Trench MOSFETs 30V, 75A, This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching • rDS ON = Typ , VGS = 10V Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. • rDS ON = Typ , VGS = 4.5V • Qg Typ = 61nC, VGS = 5V • DC/DC converters • Qgd Typ = 17nC • CISS Typ = 7000pF DRAIN FLANGE SOURCE GATE DRAIN DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE TO-220AB TO-263AB DRAIN TO-262AB FLANGE MOSFET Maximum Ratings TC= 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 100oC, VGS = 4.5V Continuous TC = 25oC, VGS = 10V, = 43oC/W Pulsed Power dissipation Derate above TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 75 25 Figure 4 215 -55 to 175 Units V W/oC Thermal Characteristics Thermal Resistance Junction to Case TO-220, TO-262, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area Package Marking and Ordering Information Device Marking N303AS N303AP N303AS Device ISL9N303AS3ST ISL9N303AP3 ISL9N303AS3 Package TO-263AB TO-220AB TO-262AA Reel Size 330mm Tube Tape Width 24mm N/A N/A oC/W oC/W oC/W Quantity 800 units 50 units 50 units 2002 Fairchild Semiconductor Corporation ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 25V VGS = 0V TC = 150o VGS = ±20V ±100 nA On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 75A, VGS = 10V ID = 75A, VGS = 4.5V Dynamic Characteristics CISS COSS CRSS Qg TOT Qg 5 Qg TH Qgs Qgd VDS = 15V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VDD = 15V VGS = 0V to 1V ID = 75A Ig = 1.0mA 7000 |
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