ISL9N302AS3ST
ISL9N302AS3ST Datasheet
ISL9N302AS3ST
| Part | Datasheet |
|---|---|
ISL9N302AS3ST |
ISL9N302AS3ST (pdf) |
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| ISL9N302AS3ST April 2002 ISL9N302AS3ST N-Channel Logic Level PWM Optimized Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. • DC/DC converters • Fast switching • rDS ON = Typ , VGS = 10V • rDS ON = Typ , VGS = 4.5V • Qg Typ = 110nC, VGS = 5V • Qgd Typ = 31nC • CISS Typ = 11000pF DRAIN FLANGE GATE SOURCE TO-263AB MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 100oC, VGS = 4.5V Continuous TC = 25oC, VGS = 10V, = 43oC/W Pulsed Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 75 28 Figure 4 345 -55 to 175 Thermal Characteristics Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 62 43 Package Marking and Ordering Information Device Marking N302AS Device ISL9N302AS3ST Package TO-263AB Reel Size 330mm Tape Width 24mm Units V A W/oC oC/W oC/W oC/W Quantity 800 units 2002 Fairchild Semiconductor Corporation ISL9N302AS3ST Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V Zero Gate Voltage Drain Current VDS = 25V VGS = 0V TC = 150o Gate to Source Leakage Current VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage VGS = VDS, ID = 250µA rDS ON Drain to Source On Resistance ID = 75A, VGS = 10V ID = 75A, VGS = 4.5V Dynamic Characteristics CISS COSS CRSS Qg TOT Qg 5 Qg TH Qgs Qgd VDS = 15V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VDD = 15V VGS = 0V to 1V ID = 75A Ig = 1.0mA Switching Characteristics VGS = 4.5V Turn-On Time |
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