ISL9N302AP3

ISL9N302AP3 Datasheet

ISL9N302AP3

Part	Datasheet
ISL9N302AP3	ISL9N302AP3 (pdf)

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ISL9N302AP3 January 2002 ISL9N302AP3 N-Channel Logic Level PWM Optimized Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. • DC/DC converters • Fast switching • rDS ON = Typ , VGS = 10V • rDS ON = Typ , VGS = 4.5V • Qg Typ = 110nC, VGS = 5V • Qgd Typ = 31nC • CISS Typ = 11000pF SOURCE DRAIN GATE DRAIN FLANGE TO-220AB MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 100oC, VGS = 4.5V Pulsed Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics Thermal Resistance Junction to Case TO-220 Thermal Resistance Junction to Ambient TO-220 Package Marking and Ordering Information Device Marking N302AP Device ISL9N302AP3 Package TO-220AB Reel Size Tube Ratings 30 ±20 75 Figure 4 345 -55 to 175 Tape Width N/A Units V A W/oC oC/W oC/W Quantity 50 2002 Fairchild Semiconductor Corporation ISL9N302AP3 Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 25V VGS = 0V TC = 150o VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage VGS = VDS, ID = 250µA rDS ON Drain to Source On Resistance ID = 75A, VGS = 10V ID = 75A, VGS = 4.5V Dynamic Characteristics CISS COSS CRSS Qg TOT Qg 5 Qg TH Qgs Qgd VDS = 15V, VGS = 0V, f = 1MHz VGS = 0V to 10V

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ISL9N302AP3

January 2002

ISL9N302AP3

N-Channel Logic Level PWM Optimized Trench Power MOSFETs

This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
• DC/DC converters
• Fast switching
• rDS ON = Typ , VGS = 10V
• rDS ON = Typ , VGS = 4.5V
• Qg Typ = 110nC, VGS = 5V
• Qgd Typ = 31nC
• CISS Typ = 11000pF

SOURCE DRAIN GATE

DRAIN FLANGE

TO-220AB

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDSS VGS

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 100oC, VGS = 4.5V Pulsed

Power dissipation Derate above 25oC

TJ, TSTG Operating and Storage Temperature

Thermal Characteristics

Thermal Resistance Junction to Case TO-220 Thermal Resistance Junction to Ambient TO-220
Package Marking and Ordering Information

Device Marking N302AP

Device ISL9N302AP3

Package TO-220AB

Reel Size Tube

Ratings 30 ±20 75

Figure 4 345
-55 to 175

Tape Width N/A

Units V

A W/oC
oC/W oC/W

Quantity 50
2002 Fairchild Semiconductor Corporation

ISL9N302AP3

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

VDS = 25V

VGS = 0V

TC = 150o

VGS = ±20V

On Characteristics

VGS TH

Gate to Source Threshold Voltage

VGS = VDS, ID = 250µA
rDS ON

Drain to Source On Resistance

ID = 75A, VGS = 10V ID = 75A, VGS = 4.5V

Dynamic Characteristics

CISS COSS CRSS Qg TOT Qg 5 Qg TH Qgs Qgd

VDS = 15V, VGS = 0V, f = 1MHz

VGS = 0V to 10V

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Datasheet ID: ISL9N302AP3 634082