ISL9K8120P3

ISL9K8120P3 Datasheet

ISL9K8120P3

Part	Datasheet
ISL9K8120P3	ISL9K8120P3 (pdf)

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ISL9K8120P3 May 2002 ISL9K8120P3 8A, 1200V Stealth Dual Diode This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM REC and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49413. • Switch Mode Power Supplies • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD • Snubber Diode Package JEDEC TO-220AB CATHODE FLANGE ANODE 2 CATHODE ANODE 1 Device Maximum Ratings per leg TC = 25°C unless otherwise noted Parameter Ratings Units VRRM VRWM VR IF AV DC Blocking Voltage Average Rectified Forward Current TC = 105oC Total Device Current Both Legs 1200 1200 1200 IFRM IFSM PD EAVL TJ, TSTG TL TPKG Repetitive Peak Surge Current 20kHz Square Wave Nonrepetitive Peak Surge Current Halfwave 1 Phase 60Hz Power Dissipation Avalanche Energy 1A, 40mH Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s Package Body for 10s, See Application Note AN-7528 -55 to 150 CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 2002 Fairchild Semiconductor Corporation ISL9K8120P3 Package Marking and Ordering Information Device Marking K8120P3 Device ISL9K8120P3 Package TO-220AB Tape Width N/A Quantity 50 Electrical Characteristics per leg TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off State Characteristics VR = 1200V TC = 25°C TC = 125°C - 100 µA On State Characteristics VF Instantaneous Forward Voltage IF = 8A TC = 25°C TC = 125°C - V - V Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A Switching Characteristics IF = 1A, dIF/dt = 100A/µs, VR = 30V 25 32 ns IF = 8A, dIF/dt = 100A/µs, VR = 30V 35 44 ns trr IRM REC IF = 8A, dIF/dt = 200A/µs, VR = 780V, TC = 25°C - 300 - - 525 trr S IRM REC QRR IF = 8A, dIF/dt = 200A/µs, VR = 780V, TC = 125°C - 375 - trr S IRM REC QRR IF = 8A, dIF/dt = 1000A/µs, VR = 780V, TC = 125°C - 200 - dIM/dt Maximum di/dt during tb - 310 - A/µs

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ISL9K8120P3

May 2002

ISL9K8120P3
8A, 1200V Stealth Dual Diode

This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM REC and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost.

Formerly developmental type TA49413.
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode

Package

JEDEC TO-220AB

CATHODE FLANGE

ANODE 2 CATHODE ANODE 1

Device Maximum Ratings per leg TC = 25°C unless otherwise noted

Parameter

Ratings

Units

VRRM VRWM

VR IF AV

DC Blocking Voltage Average Rectified Forward Current TC = 105oC Total Device Current Both Legs
1200
1200
1200

IFRM IFSM PD EAVL TJ, TSTG TL TPKG

Repetitive Peak Surge Current 20kHz Square Wave Nonrepetitive Peak Surge Current Halfwave 1 Phase 60Hz Power Dissipation Avalanche Energy 1A, 40mH Operating and Storage Temperature Range Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s Package Body for 10s, See Application Note AN-7528
-55 to 150

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
2002 Fairchild Semiconductor Corporation

ISL9K8120P3
Package Marking and Ordering Information

Device Marking K8120P3

Device ISL9K8120P3

Package TO-220AB

Tape Width N/A

Quantity 50

Electrical Characteristics per leg TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off State Characteristics

VR = 1200V

TC = 25°C TC = 125°C
- 100 µA

On State Characteristics

VF Instantaneous Forward Voltage

IF = 8A

TC = 25°C TC = 125°C
- V - V

Dynamic Characteristics

CJ Junction Capacitance

VR = 10V, IF = 0A

Switching Characteristics

IF = 1A, dIF/dt = 100A/µs, VR = 30V
25 32 ns

IF = 8A, dIF/dt = 100A/µs, VR = 30V
35 44 ns
trr IRM REC

IF = 8A, dIF/dt = 200A/µs, VR = 780V, TC = 25°C
- 300 -
- 525
trr S

IRM REC QRR

IF = 8A, dIF/dt = 200A/µs, VR = 780V, TC = 125°C
- 375 -
trr S

IRM REC QRR

IF = 8A, dIF/dt = 1000A/µs, VR = 780V, TC = 125°C
- 200 -
dIM/dt Maximum di/dt during tb
- 310 - A/µs

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Datasheet ID: ISL9K8120P3 634080