IRLW630ATM
IRLW630ATM Datasheet
IRLW/I630A
| Part | Datasheet |
|---|---|
IRLW630ATM |
IRLW630ATM (pdf) |
| PDF Datasheet Preview |
|---|
| 3RZHU 026 7 IRLW/I630A Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 150°C Operating Temperature Lower Leakage Current 10µA Max. VDS = 200V Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25°C Continuous Drain Current TC=100°C Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TA=25°C * Total Power Dissipation TC=25°C Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds BVDSS = 200 V RDS on = ID = 9 A D2-PAK I2-PAK Gate Drain Source Value 200 9 32 ±20 54 9 5 69 - 55 to +150 Units V A V mJ A mJ V/ns W/°C Thermal Resistance Characteristic Typ. Junction-to-Case Junction-to-Ambient * Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount . Max. 40 Units °C/W 1999 Fairchild Semiconductor Corporation |
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