IRLS510A

IRLS510A Datasheet

IRLS510A

Part	Datasheet
IRLS510A	IRLS510A (pdf)

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Advanced Power MOSFET IRLS510A n Logic-Level Gate Drive n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current 10 µ A Max. VDS = 100V n Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25 oC Continuous Drain Current TC=100oC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25oC Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8＂ from case for 5-seconds BVDSS = 100 V RDS on = ID = A TO-220F 1.Gate Drain Source Value 100 20 +_ 20 54 23 - 55 to +175 Units V A V mJ A mJ V/ns W/oC Thermal Resistance Characteristic Junction-to-Case Junction-to-Ambient Typ. --- Max. Units oC/W IRLS510A N-CHANNEL POWER MOSFET Electrical Characteristics TC=25oC unless otherwise specified Symbol BVDSS TJ VGS th IGSS

PDF Datasheet Preview

Advanced Power MOSFET

IRLS510A
n Logic-Level Gate Drive n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current 10 µ A Max. VDS = 100V n Lower RDS ON Typ.

Absolute Maximum Ratings

Symbol VDSS ID

IDM VGS EAS IAR EAR dv/dt

TJ , TSTG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current TC=25 oC Continuous Drain Current TC=100oC

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation TC=25oC

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8＂ from case for 5-seconds

BVDSS = 100 V RDS on = ID = A

TO-220F
1.Gate Drain Source

Value 100 20
+_ 20 54 23
- 55 to +175

Units V

A V mJ A mJ V/ns W/oC

Thermal Resistance

Characteristic Junction-to-Case Junction-to-Ambient

Typ. ---

Max.

Units oC/W

IRLS510A

N-CHANNEL POWER MOSFET

Electrical Characteristics TC=25oC unless otherwise specified

Symbol BVDSS

TJ VGS th

IGSS

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Datasheet ID: IRLS510A 634073