IRL530A

IRL530A Datasheet

IRL530A

Part	Datasheet
IRL530A	IRL530A (pdf)

PDF Datasheet Preview
Advanced Power MOSFET IRL530A n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current 10 uA Max. VDS = 100V n Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25℃ Continuous Drain Current TC=100℃ Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25℃ Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8＂ from case for 5-seconds BVDSS = 100 V RDS on = ID = 14 A TO-220 1.Gate Drain Source Value 100 14 49 ±20 261 14 62 - 55 to +175 Units V A V mJ A mJ V/ns W/℃ Thermal Resistance Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -- Max. Units ℃/W IRL530A N-CHANNEL POWER MOSFET Electrical Characteristics TC=25℃ unless otherwise specified Symbol BVDSS VGS th IGSS

PDF Datasheet Preview

Advanced Power MOSFET

IRL530A
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current 10 uA Max. VDS = 100V n Lower RDS ON Typ.

Absolute Maximum Ratings

Symbol VDSS ID

IDM VGS EAS IAR EAR dv/dt

TJ , TSTG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current TC=25℃

Continuous Drain Current TC=100℃

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation TC=25℃ Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8＂ from case for 5-seconds

BVDSS = 100 V RDS on = ID = 14 A

TO-220
1.Gate Drain Source

Value 100 14 49 ±20 261 14 62
- 55 to +175

Units V

A V mJ A mJ V/ns W/℃

Thermal Resistance

Characteristic Junction-to-Case

Case-to-Sink Junction-to-Ambient

Typ. --

Max.

Units ℃/W

IRL530A

N-CHANNEL POWER MOSFET

Electrical Characteristics TC=25℃ unless otherwise specified

Symbol BVDSS

VGS th

IGSS

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Datasheet ID: IRL530A 634063