IRL510A

IRL510A Datasheet

IRL510A

Part	Datasheet
IRL510A	IRL510A (pdf)

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3RZHU 026 7 IRL510A Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10µA Max. VDS = 100V Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25°C Continuous Drain Current TC=100°C Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25°C Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds Thermal Resistance Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient BVDSS = 100 V RDS on = ID = A TO-220 1.Gate Drain Source Value 100 20 ±20 62 37 - 55 to +175 Units V A V mJ A mJ V/ns W °C Typ. -- Max. Units °C/W 1999 Fairchild Semiconductor Corporation IRL510A 32 5 026 7 Electrical Characteristics TC=25°C unless otherwise specified Characteristic Min. Typ. Max. Units

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3RZHU 026 7

IRL510A

Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10µA Max. VDS = 100V Lower RDS ON Typ.

Absolute Maximum Ratings

Symbol VDSS ID

IDM VGS EAS IAR EAR dv/dt

TJ , TSTG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current TC=25°C

Continuous Drain Current TC=100°C

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation TC=25°C Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8 from case for 5-seconds

Thermal Resistance

Characteristic Junction-to-Case

Case-to-Sink Junction-to-Ambient

BVDSS = 100 V RDS on = ID = A

TO-220
1.Gate Drain Source

Value 100 20 ±20 62 37
- 55 to +175

Units V

A V mJ A mJ V/ns W °C

Typ. --

Max.

Units °C/W
1999 Fairchild Semiconductor Corporation

IRL510A
32 5 026 7

Electrical Characteristics TC=25°C unless otherwise specified

Characteristic

Min. Typ. Max. Units

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Datasheet ID: IRL510A 634062