IRFS644B_FP001

IRFS644B_FP001 Datasheet

IRF644B/IRFS644B

Part	Datasheet
IRFS644B_FP001	IRFS644B_FP001 (pdf)

Related Parts	Information
IRFS644BYDTU_AS001	IRFS644BYDTU_AS001

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IRF644B/IRFS644B November 2001 IRF644B/IRFS644B 250V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies. • 14A, 250V, RDS on = = 10 V • Low gate charge typical 47 nC • Low Crss typical 30 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-220 IRF Series TO-220F IRFS Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 VGSS Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 dv/dt Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. IRF644B IRFS644B ± 30 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Max. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Max.

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IRF644B/IRFS644B

November 2001

IRF644B/IRFS644B
250V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.
• 14A, 250V, RDS on = = 10 V
• Low gate charge typical 47 nC
• Low Crss typical 30 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

TO-220

IRF Series

TO-220F

IRFS Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Parameter

VDSS

Drain-Source Voltage

Drain Current - Continuous TC = 25°C
- Continuous TC = 100°C

Drain Current - Pulsed

Note 1

VGSS

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1
dv/dt

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C
- Derate above 25°C

TJ, TSTG

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.

IRF644B

IRFS644B
± 30
-55 to +150

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Max. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Max.

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Datasheet ID: IRFS644B_FP001 634058