IRFR120_R4941

IRFR120_R4941 Datasheet

IRFR120, IRFU120

Part	Datasheet
IRFR120_R4941	IRFR120_R4941 (pdf)

Related Parts	Information
IRFU120_R4941	IRFU120_R4941

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Data Sheet IRFR120, IRFU120 January 2002 8.4A, 100V, Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09594. Ordering Information PACKAGE BRAND IRFR120 TO-252AA IFR120 IRFU120 TO-251AA IFU120 NOTE When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in the tape and reel, i.e., IRFR120T. Packaging JEDEC TO-251AA SOURCE DRAIN GATE DRAIN FLANGE • 8.4A, 100V • rDS ON = • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-252AA GATE DRAIN FLANGE DRAIN SOURCE 2002 Fairchild Semiconductor Corporation IRFR120, IRFU120 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage Note VDS Drain to Gate Voltage RGS = Note 1 VDGR Continuous Drain Current ID TC = 100oC ID Pulsed Drain Current Note 3 IDM Gate to Source Voltage VGS Maximum Power Dissipation PD Linear Derating Factor Single Pulse Avalanche Energy Rating Figure EAS Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief Tpkg IRFR120, IRFU120 100 34 ±20 50 36 -55 to 175 300 260 UNITS V A V W W/oC mJ oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Internal Source Inductance BVDSS VGS TH IDSS ID ON IGSS rDS ON gfs td ON tr td OFF tf Qg TOT Qgs Qgd CISS COSS CRSS LD ID = 250µA, VGS = 0V Figure 10 VGS = VDS, ID = 250µA VDS = Rated BVDSS, VGS = 0V VDS = x Rated BVDSS, VGS = 0V, TJ = 150oC VDS > ID ON x rDS ON MAX, VGS = 10V VGS = ±20V ID = 5.9A, VGS = 10V Figures 8, 9 VDS 50V, ID = 5.9A Figure 12 VDD = 50V, ID 8.4A, RGS = RL = MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 8.4A, VDS = x Rated BVDSS, IG REF = 1.5mA Figure 14 Gate Charge is Essentially Independent of Operating Temperature VDS = 25V, VGS = 0V, f = 1MHz Figure 11 Measured from the Drain Lead, 6.0mm 0.25in from Package to Center of Die

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Data Sheet

IRFR120, IRFU120

January 2002
8.4A, 100V, Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA09594.
Ordering Information

PACKAGE

BRAND

IRFR120

TO-252AA

IFR120

IRFU120

TO-251AA

IFU120
NOTE When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in the tape and reel, i.e., IRFR120T.

Packaging

JEDEC TO-251AA

SOURCE DRAIN GATE

DRAIN FLANGE
• 8.4A, 100V
• rDS ON =
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

JEDEC TO-252AA

GATE

DRAIN FLANGE

DRAIN

SOURCE
2002 Fairchild Semiconductor Corporation

IRFR120, IRFU120

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain to Source Voltage Note VDS Drain to Gate Voltage RGS = Note 1 VDGR Continuous Drain Current ID

TC = 100oC ID Pulsed Drain Current Note 3 IDM Gate to Source Voltage VGS Maximum Power Dissipation PD Linear Derating Factor

Single Pulse Avalanche Energy Rating Figure EAS Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief Tpkg

IRFR120, IRFU120 100 34 ±20 50 36
-55 to 175
300 260

UNITS V A V W

W/oC mJ oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

Internal Source Inductance

BVDSS VGS TH

IDSS

ID ON IGSS rDS ON gfs td ON
tr td OFF
tf Qg TOT

Qgs Qgd CISS COSS CRSS LD

ID = 250µA, VGS = 0V Figure 10 VGS = VDS, ID = 250µA VDS = Rated BVDSS, VGS = 0V VDS = x Rated BVDSS, VGS = 0V, TJ = 150oC VDS > ID ON x rDS ON MAX, VGS = 10V VGS = ±20V ID = 5.9A, VGS = 10V Figures 8, 9 VDS 50V, ID = 5.9A Figure 12 VDD = 50V, ID 8.4A, RGS = RL = MOSFET Switching Times are Essentially Independent of Operating Temperature

VGS = 10V, ID = 8.4A, VDS = x Rated BVDSS, IG REF = 1.5mA Figure 14 Gate Charge is Essentially Independent of Operating Temperature

VDS = 25V, VGS = 0V, f = 1MHz Figure 11

Measured from the Drain Lead, 6.0mm 0.25in from Package to Center of Die

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Datasheet ID: IRFR120_R4941 634050