IRFR130ATM
IRFR130ATM Datasheet
IRFR/U130A
| Part | Datasheet |
|---|---|
IRFR130ATM |
IRFR130ATM (pdf) |
| PDF Datasheet Preview |
|---|
| Advanced Power MOSFET IRFR/U130A Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 µA Max. VDS = 100V Lower RDS ON Typ. BVDSS = 100 V RDS on = ID = 13 A D-PAK I-PAK Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25 ΟC Continuous Drain Current TC=100 ΟC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TA=25 ΟC * Total Power Dissipation TC=25 ΟC Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Gate Drain Source Value 100 13 52 +_ 20 225 13 41 - 55 to +150 Units V A V mJ A mJ V/ns W/ ΟC Thermal Resistance Characteristic Typ. Junction-to-Case Junction-to-Ambient * Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount . Max. 50 110 Units ΟC /W 1999 Fairchild Semiconductor Corporation IRFR/U130A |
| More datasheets: DBMY25SF179 | DDMA-78S-F0 | ML4841CP | DDM-50S-F179A | MDM-37PH026K | TLE6251DSNTMA1 | IRAMS06UP60B-2 | IRAMS06UP60B | MAX17019EVKIT+ | LTC2246HLU#PBF |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IRFR130ATM Datasheet file may be downloaded here without warranties.