IRFP460C
IRFP460C Datasheet
IRFP460C
| Part | Datasheet |
|---|---|
IRFP460C |
IRFP460C (pdf) |
| PDF Datasheet Preview |
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| IRFP460C February 2002 IRFP460C 500V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and power factor corrections. • 20A, 500V, RDS on = = 10 V • Low gate charge typical 130nC • Low Crss typical 60 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-3PN IRFP Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds IRFP460C 500 20 80 ± 30 1050 20 235 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Units V A V mJ A mJ V/ns W W/°C °C Units °C/W °C/W °C/W 2002 Fairchild Semiconductor Corporation IRFP460C |
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