IRFN214BTA_FP001

IRFN214BTA_FP001 Datasheet

IRFN214B

Part	Datasheet
IRFN214BTA_FP001	IRFN214BTA_FP001 (pdf)

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IRFN214B IRFN214B 250V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast. • 0.6A, 250V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-92 IRFN Series Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TA = 25°C - Continuous TA = 70°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TL = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Lead Thermal Resistance, Junction-to-Ambient IRFN214B 250 ± 30 45 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Units °C/W °C/W 2004 Fairchild Semiconductor Corporation IRFN214B Electrical Characteristics

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IRFN214B

IRFN214B
250V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast.
• 0.6A, 250V, RDS on = = 10 V
• Low gate charge typical nC
• Low Crss typical pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

TO-92

IRFN Series

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TA = 25°C - Continuous TA = 70°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TL = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Lead Thermal Resistance, Junction-to-Ambient

IRFN214B 250 ± 30 45
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Units °C/W °C/W
2004 Fairchild Semiconductor Corporation

IRFN214B

Electrical Characteristics

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Datasheet ID: IRFN214BTA_FP001 634043