IRF540N_R4942
IRF540N_R4942 Datasheet
IRF540N
| Part | Datasheet |
|---|---|
IRF540N_R4942 |
IRF540N_R4942 (pdf) |
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| Data Sheet January 2002 IRF540N 33A, 100V, Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE IRF540N • Ultra Low On-Resistance - rDS ON = VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PACKAGE IRF540N TO-220AB BRAND IRF540N Absolute Maximum Ratings TC = 25oC, Unless Otherwise IRF540N UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current Continuous TC= TC= 12500oCoC, V, VGGSS==101V0V F Figiugruere2 2 . Pulsed Drain Current .IDM Pulsed Avalanche Rating .UIS ±20 Figure 4 Figures 6, 14, 15 Power Dissipation Derate Above 25oC W/oC Operating and Storage Temperature TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief TB334 Tpkg TJ = 25oC to 150oC. CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. 2002 Fairchild Semiconductor Corporation IRF540N Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BV DSS I DSS I GSS ID = 250µA, VGS = 0V Figure 11 VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC VGS = ±20V Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS |
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