HUFA76429D3S
HUFA76429D3S Datasheet
HUFA76429D3, HUFA76429D3S
| Part | Datasheet |
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HUFA76429D3S |
HUFA76429D3S (pdf) |
| Related Parts | Information |
|---|---|
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HUFA76429D3ST-F085 |
HUFA76429D3ST-F085 |
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HUFA76429D3ST |
HUFA76429D3ST |
| PDF Datasheet Preview |
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| Data Sheet HUFA76429D3, HUFA76429D3S December 2012 20A, 60V, Ohm, N-Channel, Logic Level Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN GATE DRAIN FLANGE HUFA76429D3 GATE SOURCE DRAIN FLANGE HUFA76429D3S • Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V • Simulation Models - Temperature Compensated and SABER Electriecal Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PACKAGE BRAND HUFA76429D3 TO-251AA 76429D HUFA76429D3S TO-252AA 76429D NOTE When ordering, use the entire part number. Add the T to obtain the variant in tape and reel, e.g., HUFA76429D3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise HUFA76429D3, HUFA76429D3S UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±16 Drain Current Continuous TC= 25oC, VGS = 5V ID Continuous TC= 25oC, VGS = 10V Figure 2 ID Continuous TC= TC= 100oC, 100oC, 5V 4.5V Figure Pulsed Drain Current .IDM Figure 4 Pulsed Avalanche Rating .UIS Figures 6, 17, 18 Power Dissipation PD Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief TB334 Tpkg NOTES TJ = 25oC to 150oC. 110 -55 to 175 300 260 W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. HUFA76429D3, HUFA76429D3S Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TC = -40oC Figure 12 VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TC = 150oC VGS = ±16V Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS VGS TH rDS ON |
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