HUFA76429S3ST

HUFA76429S3ST Datasheet

HUFA76429P3, HUFA76429S3S

Part	Datasheet
HUFA76429S3ST	HUFA76429S3ST (pdf)

Related Parts	Information
HUFA76429S3S	HUFA76429S3S
HUFA76429P3	HUFA76429P3

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Data Sheet HUFA76429P3, HUFA76429S3S December 2001 44A, 60V, Ohm, N-Channel, Logic Level Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE DRAIN FLANGE HUFA76429P3 GATE SOURCE HUFA76429S3S • Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PACKAGE BRAND HUFA76429P3 TO-220AB 76429P HUFA76429S3S TO-263AB 76429S NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA76429S3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUFA76429P3, HUFA76429S3S UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±16 Drain Current Continuous 1220550ooCCoC,, ,VVVGGGSSS===1505VVV Figure 44 47 31 Continuous TC = 100oC, VGS = 4.5V Figure 2 ID Pulsed Drain Current IDM Figure 4 Pulsed Avalanche Rating UIS Figures 6, 17, 18 Power Dissipation Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief TB334. Tpkg TJ = 25oC to 150oC. 110 -55 to 175 300 260 W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUFA76429P3, HUFA76429S3S Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TC = -40oC Figure 12 VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TC = 150oC VGS = ±16V Gate to Source Threshold Voltage Drain to Source On Resistance

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Data Sheet

HUFA76429P3, HUFA76429S3S

December 2001
44A, 60V, Ohm, N-Channel, Logic Level Power MOSFETs

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE DRAIN GATE

DRAIN FLANGE

DRAIN FLANGE

HUFA76429P3

GATE SOURCE

HUFA76429S3S
• Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information

PACKAGE

BRAND

HUFA76429P3

TO-220AB
76429P

HUFA76429S3S

TO-263AB
76429S
NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA76429S3ST.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HUFA76429P3, HUFA76429S3S UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±16

Drain Current

Continuous
1220550ooCCoC,, ,VVVGGGSSS===1505VVV

Figure
44 47 31

Continuous TC = 100oC, VGS = 4.5V Figure 2 ID

Pulsed Drain Current IDM

Figure 4

Pulsed Avalanche Rating UIS

Figures 6, 17, 18

Power Dissipation Derate Above 25oC

Operating and Storage Temperature TJ, TSTG

Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief TB334. Tpkg

TJ = 25oC to 150oC.
110 -55 to 175
300 260

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUFA76429P3, HUFA76429S3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BVDSS IDSS IGSS

ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TC = -40oC Figure 12

VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TC = 150oC

VGS = ±16V

Gate to Source Threshold Voltage Drain to Source On Resistance

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Datasheet ID: HUFA76429S3ST 634007