HUFA75645P3

HUFA75645P3 Datasheet

HUFA75645P3, HUFA75645S3S

Part	Datasheet
HUFA75645P3	HUFA75645P3 (pdf)

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Data Sheet HUFA75645P3, HUFA75645S3S December 2001 75A, 100V, Ohm, N-Channel, Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE GATE SOURCE DRAIN FLANGE DRAIN FLANGE HUFA75645P3 HUFA75645S3S • Ultra Low On-Resistance - rDS ON = VGS = 10V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and Saber Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PACKAGE BRAND HUFA75645P3 TO-220AB 75645P HUFA75645S3S TO-263AB 75645S NOTE When ordering, use the entire part number. Add the T to obtain the variant in tape and reel, e.g., HUFA75645S3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise HUFA75645P3, HUFA75645S3S UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±20 Drain Current Continuous T C T C 12050oCoC, V, VGGSS==1100VV F Figiguurere22 75 65 Pulsed Drain Current .IDM Figure 4 Pulsed Avalanche Rating .UIS Figures 6, 14, 15 Power Dissipation PD Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief TB334 Tpkg NOTES: 310 -55 to 175 300 260 W/oC TJ = 25oC to 150oC. CAUTION Stresses above those listed in “Absol24ute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUFA75645P3, HUFA75645S3S Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BV DSS I DSS I GSS ID = 250µA, VGS = 0V Figure 11 VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC VGS = ±20V Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS V GS TH r DS ON VGS = VDS, ID = 250µA Figure 10 ID = 75A, VGS = 10V Figure 9 Thermal Resistance Junction to Case

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Data Sheet

HUFA75645P3, HUFA75645S3S

December 2001
75A, 100V, Ohm, N-Channel, Power MOSFETs

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE DRAIN GATE

GATE SOURCE

DRAIN FLANGE

DRAIN FLANGE

HUFA75645P3

HUFA75645S3S
• Ultra Low On-Resistance - rDS ON = VGS = 10V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and Saber Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information

PACKAGE

BRAND

HUFA75645P3

TO-220AB
75645P

HUFA75645S3S

TO-263AB
75645S
NOTE When ordering, use the entire part number. Add the T to obtain the variant in tape and reel, e.g., HUFA75645S3ST.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

HUFA75645P3, HUFA75645S3S UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±20

Drain Current

Continuous

T C T C
12050oCoC, V, VGGSS==1100VV F Figiguurere22
75 65

Pulsed Drain Current .IDM

Figure 4

Pulsed Avalanche Rating .UIS

Figures 6, 14, 15

Power Dissipation PD Derate Above 25oC

Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief TB334 Tpkg NOTES:
310 -55 to 175
300 260

W/oC

TJ = 25oC to 150oC.

CAUTION Stresses above those listed in “Absol24ute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUFA75645P3, HUFA75645S3S

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BV DSS I DSS

I GSS

ID = 250µA, VGS = 0V Figure 11 VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC VGS = ±20V

Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS

V GS TH r DS ON

VGS = VDS, ID = 250µA Figure 10 ID = 75A, VGS = 10V Figure 9

Thermal Resistance Junction to Case

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Datasheet ID: HUFA75645P3 633990