HUFA75623S3ST

HUFA75623S3ST Datasheet

HUFA75623P3, HUFA75623S3ST

Part	Datasheet
HUFA75623S3ST	HUFA75623S3ST (pdf)

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Data Sheet HUFA75623P3, HUFA75623S3ST December 2001 22A, 100V, Ohm, N-Channel, Power MOSFETs Packaging JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-263AB DRAIN FLANGE DRAIN FLANGE HUFA75623P3 GATE SOURCE HUFA75623S3ST • Ultra Low On-Resistance - rDS ON = VGS = 10V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PACKAGE BRAND HUFA75623P3 TO-220AB 75623P HUFA75623S3ST TO-263AB 75623S NOTE When ordering, use the entire part number i.e., HUFA75623P3. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUFA75623P3, HUFA75623S3ST UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±20 Drain Current Continuous 21050oCoC, V, VGGSS==101V0V F Figiugruere2 2 22 15 Pulsed Drain Current IDM Figure 4 Pulsed Avalanche Rating UIS Figures 6, 14, 15 Power Dissipation Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief TB334. Tpkg NOTE TJ = 25oC to 150oC. 85 -55 to 175 300 260 W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Faircild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUFA75623P3, HUFA75623S3ST Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 11 VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC VGS = ±20V Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS VGS TH rDS ON VGS = VDS, ID = 250µA Figure 10 ID = 22A, VGS = 10V Figure 9 Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-220

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Data Sheet

HUFA75623P3, HUFA75623S3ST

December 2001
22A, 100V, Ohm, N-Channel, Power MOSFETs

Packaging

JEDEC TO-220AB

SOURCE DRAIN GATE

JEDEC TO-263AB

DRAIN FLANGE

DRAIN FLANGE

HUFA75623P3

GATE SOURCE

HUFA75623S3ST
• Ultra Low On-Resistance - rDS ON = VGS = 10V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information

PACKAGE

BRAND

HUFA75623P3

TO-220AB
75623P

HUFA75623S3ST TO-263AB
75623S
NOTE When ordering, use the entire part number i.e., HUFA75623P3.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HUFA75623P3, HUFA75623S3ST UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±20

Drain Current

Continuous
21050oCoC, V, VGGSS==101V0V F Figiugruere2 2
22 15

Pulsed Drain Current IDM

Figure 4

Pulsed Avalanche Rating UIS

Figures 6, 14, 15

Power Dissipation Derate Above 25oC

Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief TB334. Tpkg NOTE TJ = 25oC to 150oC.
85 -55 to 175
300 260

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Faircild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUFA75623P3, HUFA75623S3ST

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BVDSS IDSS

IGSS

ID = 250µA, VGS = 0V Figure 11 VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC VGS = ±20V

Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS

VGS TH rDS ON

VGS = VDS, ID = 250µA Figure 10 ID = 22A, VGS = 10V Figure 9

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

TO-220

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Datasheet ID: HUFA75623S3ST 633988