HUFA75329D3S

HUFA75329D3S Datasheet

HUFA75329D3, HUFA75329D3S

Part	Datasheet
HUFA75329D3S	HUFA75329D3S (pdf)

Related Parts	Information
HUFA75329D3ST	HUFA75329D3ST
HUFA75329D3	HUFA75329D3

PDF Datasheet Preview
Data Sheet HUFA75329D3, HUFA75329D3S June 1999 File Number 20A, 55V, Ohm, N-Channel UltraFET Power MOSFETs Formerly developmental type TA75329. Ordering Information PACKAGE BRAND HUFA75329D3 TO-251AA 75329D HUFA75329D3S TO-252AA 75329D NOTE When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUFA75329D3ST. Packaging JEDEC TO-251AA DRAIN FLANGE SOURCE DRAIN GATE • 20A, 55V • Simulation Models - Temperature Compensated and SABER Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-252AA DRAIN FLANGE GATE SOURCE This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: 2001 Fairchild Semiconductor Corporation HUFA75329D3, HUFA75329D3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current Continuous Figure ID Pulsed Drain Current IDM Pulsed Avalanche Rating EAS Power Dissipation Derate Above 25oC Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 Tpkg 55 ±20 20 Figure 4 Figure 6 128 -55 to 175 300 260 UNITS V W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS TEST CONDITIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 11 VDS = 50V, VGS = 0V VDS = 45V, VGS = 0V, TC = 150oC VGS = ±20V VGS TH rDS ON

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Data Sheet

HUFA75329D3, HUFA75329D3S

June 1999 File Number
20A, 55V, Ohm, N-Channel UltraFET Power MOSFETs

Formerly developmental type TA75329.
Ordering Information

PACKAGE

BRAND

HUFA75329D3

TO-251AA
75329D

HUFA75329D3S

TO-252AA
75329D
NOTE When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUFA75329D3ST.

Packaging

JEDEC TO-251AA

DRAIN FLANGE

SOURCE DRAIN GATE
• 20A, 55V
• Simulation Models
- Temperature Compensated and SABER Models
- SPICE and SABER Thermal Impedance Models Available on the WEB at:
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

JEDEC TO-252AA

DRAIN FLANGE

GATE

SOURCE

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:
2001 Fairchild Semiconductor Corporation

HUFA75329D3, HUFA75329D3S

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current

Continuous Figure ID

Pulsed Drain Current IDM

Pulsed Avalanche Rating EAS

Power Dissipation Derate Above 25oC

Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 Tpkg
55 ±20
20 Figure 4 Figure 6
128 -55 to 175
300 260

UNITS V

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS

TEST CONDITIONS

BVDSS IDSS

IGSS

ID = 250µA, VGS = 0V Figure 11 VDS = 50V, VGS = 0V VDS = 45V, VGS = 0V, TC = 150oC VGS = ±20V

VGS TH rDS ON

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Datasheet ID: HUFA75329D3S 633975