HUF76419P3

HUF76419P3 Datasheet

HUF76419P3, HUF76419S3S

Part	Datasheet
HUF76419P3	HUF76419P3 (pdf)

Related Parts	Information
HUF76419S3S	HUF76419S3S
HUF76419S3ST	HUF76419S3ST

PDF Datasheet Preview
Data Sheet HUF76419P3, HUF76419S3S December 2001 27A, 60V, Ohm, N-Channel, Logic Level Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE DRAIN FLANGE HUF76419P3 GATE SOURCE HUF76419S3S • Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PACKAGE BRAND HUF76419P3 TO-220AB 76419P HUF76419S3S TO-263AB 76419S NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76419S3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76419P3, HUF76419S3S UNITS Drain to Source Voltage Note VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±16 Drain Current Continuous 25oC, 25oC, 5V 10V Figure 2 27 29 Continuous 100oC, 100oC, 5V 4.5V Figure 19 18 Pulsed Drain Current IDM Figure 4 Pulsed Avalanche Rating UIS Figures 6, 17, 18 Power Dissipation PD Derate Above 25oC Operating and Storage Temperature. TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief TB334. Tpkg NOTES TJ = 25oC to 150oC. 75 -55 to 175 300 260 W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Product reliability information can be found at For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUF76419P3, HUF76419S3S Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS

PDF Datasheet Preview

Data Sheet

HUF76419P3, HUF76419S3S

December 2001
27A, 60V, Ohm, N-Channel, Logic Level Power MOSFET

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE DRAIN GATE

DRAIN FLANGE

DRAIN FLANGE

HUF76419P3

GATE SOURCE

HUF76419S3S
• Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information

PACKAGE

BRAND

HUF76419P3

TO-220AB
76419P

HUF76419S3S

TO-263AB
76419S
NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76419S3ST.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HUF76419P3, HUF76419S3S

UNITS

Drain to Source Voltage Note VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±16

Drain Current

Continuous
25oC, 25oC,
5V 10V

Figure 2
27 29

Continuous
100oC, 100oC,
5V 4.5V

Figure
19 18

Pulsed Drain Current IDM

Figure 4

Pulsed Avalanche Rating UIS

Figures 6, 17, 18

Power Dissipation PD Derate Above 25oC

Operating and Storage Temperature. TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief TB334. Tpkg NOTES TJ = 25oC to 150oC.
75 -55 to 175
300 260

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Product reliability information can be found at For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUF76419P3, HUF76419S3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived HUF76419P3 Datasheet file may be downloaded here without warranties.

Datasheet ID: HUF76419P3 633955