HUF75831SK8T

HUF75831SK8T Datasheet

HUF75831SK8

Part	Datasheet
HUF75831SK8T	HUF75831SK8T (pdf)

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Data Sheet HUF75831SK8 December 2001 3A, 150V, Ohm, N-Channel, Power MOSFET Packaging JEDEC MS-012AA BRANDING DASH 1 2 3 4 SOURCE 1 SOURCE 2 SOURCE 3 GATE 4 DRAIN 8 DRAIN 7 DRAIN 6 DRAIN 5 • Ultra Low On-Resistance - rDS ON = VGS = 10V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PACKAGE BRAND HUF75831SK8 MS-012AA 75831SK8 NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF75831SK8T. Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified HUF75831SK8 UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±20 Drain Current Continuous TA= TA= 2150o0CoC, V, VGGSS==101V0V F Figiugruere2 2 . Pulsed Drain Current IDM Figure 4 Pulsed Avalanche Rating UIS Figures 6, 14, 15 Power Dissipation PD Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Tech Brief TB370 Tpkg NOTES TJ = 25oC to 125oC. 50oC/W measured using FR-4 board with in2 mm2 copper pad at 10 second. 152oC/W measured using FR-4 board with in2 mm2 copper pad at 1000 seconds 189oC/W measured using FR-4 board with in2 mm2 copper pad at 1000 seconds 20 -55 to 150 300 260 W mW/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Product reliability information can be found at For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUF75831SK8 Electrical Specifications TA = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 11 VDS = 140V, VGS = 0V VDS = 135V, VGS = 0V, TA = 150oC VGS = ±20V Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient VGS TH rDS ON VGS = VDS, ID = 250µA Figure 10 ID = 3A, VGS = 10V Figure 9 Pad Area = in2 mm2 Note 2 Pad Area = in2 mm2 Note 3 Pad Area = in2 mm2 Note 4

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Data Sheet

HUF75831SK8

December 2001
3A, 150V, Ohm, N-Channel, Power MOSFET

Packaging

JEDEC MS-012AA

BRANDING DASH
1 2 3 4

SOURCE 1 SOURCE 2 SOURCE 3

GATE 4

DRAIN 8 DRAIN 7 DRAIN 6 DRAIN 5
• Ultra Low On-Resistance - rDS ON = VGS = 10V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information

PACKAGE

BRAND

HUF75831SK8

MS-012AA
75831SK8
NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF75831SK8T.

Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified

HUF75831SK8

UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±20

Drain Current

Continuous

TA= TA=
2150o0CoC, V, VGGSS==101V0V F Figiugruere2 2 .

Pulsed Drain Current IDM

Figure 4

Pulsed Avalanche Rating UIS

Figures 6, 14, 15

Power Dissipation PD Derate Above 25oC

Operating and Storage Temperature TJ, TSTG

Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Tech Brief TB370 Tpkg

NOTES TJ = 25oC to 125oC. 50oC/W measured using FR-4 board with in2 mm2 copper pad at 10 second. 152oC/W measured using FR-4 board with in2 mm2 copper pad at 1000 seconds 189oC/W measured using FR-4 board with in2 mm2 copper pad at 1000 seconds
20 -55 to 150
300 260

W mW/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Product reliability information can be found at For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUF75831SK8

Electrical Specifications TA = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BVDSS IDSS

IGSS

ID = 250µA, VGS = 0V Figure 11 VDS = 140V, VGS = 0V VDS = 135V, VGS = 0V, TA = 150oC VGS = ±20V

Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient

VGS TH rDS ON

VGS = VDS, ID = 250µA Figure 10 ID = 3A, VGS = 10V Figure 9

Pad Area = in2 mm2 Note 2 Pad Area = in2 mm2 Note 3 Pad Area = in2 mm2 Note 4

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Datasheet ID: HUF75831SK8T 633945