HUF75329D3S

HUF75329D3S Datasheet

HUF75329D3, HUF75329D3S

Part	Datasheet
HUF75329D3S	HUF75329D3S (pdf)

Related Parts	Information
HUF75329D3	HUF75329D3

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Data Sheet HUF75329D3, HUF75329D3S December 2001 20A, 55V, Ohm, N-Channel UltraFET Power MOSFETs Formerly developmental type TA75329. Ordering Information PACKAGE BRAND HUF75329D3 TO-251AA 75329D HUF75329D3S TO-252AA 75329D NOTE When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUF75329D3ST. Packaging JEDEC TO-251AA • 20A, 55V • Simulation Models - Temperature Compensated and SABER Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN FLANGE Product reliability information can be found at For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUF75329D3, HUF75329D3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current Continuous Figure ID Pulsed Drain Current IDM Pulsed Avalanche Rating EAS Power Dissipation Derate Above 25oC Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief 334 Tpkg 55 ±20 20 Figure 4 Figure 6 128 -55 to 175 300 260 UNITS V W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS TEST CONDITIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 11 VDS = 50V, VGS = 0V VDS = 45V, VGS = 0V, TC = 150oC VGS = ±20V VGS TH rDS ON

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Data Sheet

HUF75329D3, HUF75329D3S

December 2001
20A, 55V, Ohm, N-Channel UltraFET Power MOSFETs

Formerly developmental type TA75329.
Ordering Information

PACKAGE

BRAND

HUF75329D3

TO-251AA
75329D

HUF75329D3S

TO-252AA
75329D
NOTE When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUF75329D3ST.

Packaging

JEDEC TO-251AA
• 20A, 55V
• Simulation Models
- Temperature Compensated and SABER Models
- SPICE and SABER Thermal Impedance Models Available on the WEB at:
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

JEDEC TO-252AA

DRAIN FLANGE

SOURCE DRAIN GATE

GATE SOURCE

DRAIN FLANGE

Product reliability information can be found at For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUF75329D3, HUF75329D3S

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current

Continuous Figure ID

Pulsed Drain Current IDM

Pulsed Avalanche Rating EAS

Power Dissipation Derate Above 25oC

Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief 334 Tpkg
55 ±20
20 Figure 4 Figure 6
128 -55 to 175
300 260

UNITS V

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS

TEST CONDITIONS

BVDSS IDSS

IGSS

ID = 250µA, VGS = 0V Figure 11 VDS = 50V, VGS = 0V VDS = 45V, VGS = 0V, TC = 150oC VGS = ±20V

VGS TH rDS ON

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived HUF75329D3S Datasheet file may be downloaded here without warranties.

Datasheet ID: HUF75329D3S 633931