HUF75321S3S

HUF75321S3S Datasheet

HUF75321P3, HUF75321S3S

Part	Datasheet
HUF75321S3S	HUF75321S3S (pdf)

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Data Sheet HUF75321P3, HUF75321S3S December 2001 35A, 55V, Ohm, N-Channel UltraFET Power MOSFETs Formerly developmental type TA75321. Ordering Information PACKAGE BRAND HUF75321P3 TO-220AB 75321P HUF75321S3S TO-263AB 75321S NOTE When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75321S3ST. Packaging JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE • 35A, 55V • Simulation Models - Temperature Compensated and SABER Models - Thermal Impedance SPICE and SABER Models Available on the WEB at: • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-263AB GATE SOURCE DRAIN FLANGE Product reliability information can be found at For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUF75321P3, HUF75321S3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current Continuous Figure ID Pulsed Drain Current IDM Pulsed Avalanche Rating EAS Power Dissipation Derate Above 25oC Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief 334 Tpkg 55 ±20 35 Figure 4 Figures 6, 14, 15 93 -55 to 175 300 260 UNITS V W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS

PDF Datasheet Preview

Data Sheet

HUF75321P3, HUF75321S3S

December 2001
35A, 55V, Ohm, N-Channel UltraFET Power MOSFETs

Formerly developmental type TA75321.
Ordering Information

PACKAGE

BRAND

HUF75321P3

TO-220AB
75321P

HUF75321S3S

TO-263AB
75321S
NOTE When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75321S3ST.

Packaging

JEDEC TO-220AB

DRAIN FLANGE

SOURCE DRAIN GATE
• 35A, 55V
• Simulation Models
- Temperature Compensated and SABER Models
- Thermal Impedance SPICE and SABER Models Available on the WEB at:
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

JEDEC TO-263AB

GATE SOURCE

DRAIN FLANGE

Product reliability information can be found at For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUF75321P3, HUF75321S3S

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current

Continuous Figure ID

Pulsed Drain Current IDM

Pulsed Avalanche Rating EAS

Power Dissipation Derate Above 25oC

Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief 334 Tpkg
55 ±20
35 Figure 4 Figures 6, 14, 15
93 -55 to 175
300 260

UNITS V

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BVDSS IDSS

IGSS

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Datasheet ID: HUF75321S3S 633929