HRF3205

HRF3205 Datasheet

HRF3205, HRF3205S

Part	Datasheet
HRF3205	HRF3205 (pdf)

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Data Sheet HRF3205, HRF3205S December 2001 100A, 55V, Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. NOTE Calculated continuous current based on maximum allowable junction temperature. Package limited to 75A continuous, see Figure Ordering Information PART NUMBER HRF3205 HRF3205S PACKAGE TO-220AB TO-263AB BRAND HRF3205 HRF3205S NOTE When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HRF3205ST. Packaging DRAIN FLANGE JEDEC TO-220AB SOURCE DRAIN GATE • 100A, 55V See Note • Low On-Resistance, rDS ON = • Temperature Compensating Model • Thermal Impedance SPICE Model • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-263AB GATE SOURCE DRAIN FLANGE 2001 Fairchild Semiconductor Corporation HRF3205, HRF3205S Absolute Maximum Ratings TC = 25oC, Unless Othewise Specified Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±20V Drain Current Continuous ID Pulsed Drain Current Note 2 IDM Pulsed Avalanche Rating EAS Figure 10 Power Dissipation PD Derate Above 25oC Operating and Storage Temperature TJ, TSTG 175 -55 to 175 W/oC Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief 334 Tpkg 300 260 CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS MIN TYP Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Breakdown Voltage Temperature Coefficient BVDSS ID = 250µA, VGS = 0V VGS TH VGS = VDS, ID = 250µA IDSS

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Data Sheet

HRF3205, HRF3205S

December 2001
100A, 55V, Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

NOTE Calculated continuous current based on maximum allowable junction temperature. Package limited to 75A continuous, see Figure
Ordering Information

PART NUMBER HRF3205 HRF3205S

PACKAGE TO-220AB TO-263AB

BRAND HRF3205 HRF3205S
NOTE When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HRF3205ST.

Packaging

DRAIN FLANGE

JEDEC TO-220AB

SOURCE DRAIN GATE
• 100A, 55V See Note
• Low On-Resistance, rDS ON =
• Temperature Compensating Model
• Thermal Impedance SPICE Model
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

JEDEC TO-263AB

GATE SOURCE

DRAIN FLANGE
2001 Fairchild Semiconductor Corporation

HRF3205, HRF3205S

Absolute Maximum Ratings TC = 25oC, Unless Othewise Specified

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±20V

Drain Current

Continuous ID

Pulsed Drain Current Note 2 IDM

Pulsed Avalanche Rating EAS

Figure 10

Power Dissipation PD Derate Above 25oC

Operating and Storage Temperature TJ, TSTG
175 -55 to 175

W/oC

Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief 334 Tpkg
300 260

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

MIN TYP

Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current Breakdown Voltage Temperature Coefficient

BVDSS ID = 250µA, VGS = 0V

VGS TH VGS = VDS, ID = 250µA

IDSS

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Datasheet ID: HRF3205 633920