HGT1S7N60C3DS9A

HGT1S7N60C3DS9A Datasheet

HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Part	Datasheet
HGT1S7N60C3DS9A	HGT1S7N60C3DS9A (pdf)

Related Parts	Information
HGT1S7N60C3DS	HGT1S7N60C3DS
HGTP7N60C3D	HGTP7N60C3D

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HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes September 2005 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49121. -14A, 600V at TC = 25oC - 600V Switching SOA Capability - Typical Fall Time...................140ns at TJ = 150oC - Short Circuit Rating - Low Conduction Loss - Hyperfast Anti-Parallel Diode JEDEC TO-220AB COLLECTOR FLANGE EMITTER COLLECTOR GATE COLLECTOR FLANGE JEDEC TO-262 EMITTER COLLECTOR GATE JEDEC TO-263AB GATE EMITTER COLLECTOR FLANGE FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 2005 Fairchild Semiconductor Corporation HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter Ratings Units BVCES IC25 IC110 I AVG Collector to Emitter Voltage Collector Current Continuous At TC = 25oC Collector Current Continuous At TC = 110oC Average Diode Forward Current at 110oC ICM VGES VGEM SSOA TJ, TSTG TL Collector Current Pulsed Note 1 Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150oC Figure 14 Power Dissipation Total at TC = 25oC Power Dissipation Derating TC > 25oC Operating and Storage Junction Temperature Range Package Marking and Ordering Information Part Number HGTP7N60C3D HGT1S7N60C3DS HGT1S7N60C3D Package TO-220AB TO-263AB TO-262 Brand G7N60C3D NOTES:When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A. HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0V ICES Collector to Emitter Leakage Current VCE = BVCES, TC = 25oC VCE = BVCES, TC = 150oC IGES VCE SAT Gate-Emitter Leakage Current Collector to Emitter Saturation Voltage VGE = ±25V IC = IC110, VGE = 15V TC = 25oC TC = 150oC 250 µA mA ±250 nA On Characteristics VGE TH Gate-Emitter Threshold Voltage SSOA VGEP Switching SOA Gate to Emitter Plateau Voltage IC = 250µA, VCE = VGE, TC = 25oC TJ = 150oC, VCE PK = 480V RG = , VGE = 15V, VCE PK = 600V L = 1mH IC = IC110, VCE = BVCES Switching Characteristics td ON I trI td OFF I tfI EON EOFF Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy Note 3 QG ON-State Gate Charge TJ = 150oC ICE = IC110 VCE PK = BVCES VGE = 15V L = 1mH IC = IC110, VGE = 15V VCE = BVCES VGE = 20V

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HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

September 2005

HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49121.
-14A, 600V at TC = 25oC - 600V Switching SOA Capability - Typical Fall Time...................140ns at TJ = 150oC - Short Circuit Rating - Low Conduction Loss - Hyperfast Anti-Parallel Diode

JEDEC TO-220AB COLLECTOR FLANGE

EMITTER COLLECTOR GATE

COLLECTOR FLANGE

JEDEC TO-262 EMITTER

COLLECTOR

GATE

JEDEC TO-263AB

GATE EMITTER

COLLECTOR FLANGE

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,598,461 4,682,195 4,803,533 4,888,627
4,417,385 4,605,948 4,684,413 4,809,045 4,890,143
4,430,792 4,620,211 4,694,313 4,809,047 4,901,127
4,443,931 4,631,564 4,717,679 4,810,665 4,904,609
4,466,176 4,639,754 4,743,952 4,823,176 4,933,740
4,516,143 4,639,762 4,783,690 4,837,606 4,963,951
4,532,534 4,641,162 4,794,432 4,860,080 4,969,027
4,587,713 4,644,637 4,801,986 4,883,767
2005 Fairchild Semiconductor Corporation

HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D

HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Parameter

Ratings

Units

BVCES IC25 IC110 I AVG

Collector to Emitter Voltage

Collector Current Continuous At TC = 25oC Collector Current Continuous At TC = 110oC Average Diode Forward Current at 110oC

ICM VGES VGEM SSOA

TJ, TSTG TL

Collector Current Pulsed Note 1

Gate to Emitter Voltage Continuous

Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150oC Figure 14 Power Dissipation Total at TC = 25oC Power Dissipation Derating TC > 25oC Operating and Storage Junction Temperature Range
Package Marking and Ordering Information

Part Number HGTP7N60C3D HGT1S7N60C3DS HGT1S7N60C3D

Package TO-220AB TO-263AB

TO-262

Brand G7N60C3D
NOTES:When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A.

HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVCES

Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0V

ICES

Collector to Emitter Leakage Current

VCE = BVCES, TC = 25oC VCE = BVCES, TC = 150oC

IGES VCE SAT

Gate-Emitter Leakage Current Collector to Emitter Saturation Voltage

VGE = ±25V

IC = IC110, VGE = 15V

TC = 25oC

TC = 150oC
250 µA mA
±250 nA

On Characteristics

VGE TH Gate-Emitter Threshold Voltage

SSOA VGEP

Switching SOA Gate to Emitter Plateau Voltage

IC = 250µA, VCE = VGE, TC = 25oC

TJ = 150oC, VCE PK = 480V

RG = ,

VGE = 15V, VCE PK = 600V

L = 1mH

IC = IC110, VCE = BVCES

Switching Characteristics
td ON I trI td OFF I tfI EON EOFF

Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy Note 3

QG ON-State Gate Charge

TJ = 150oC ICE = IC110

VCE PK = BVCES

VGE = 15V

L = 1mH

IC = IC110,

VGE = 15V

VCE = BVCES VGE = 20V

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Datasheet ID: HGT1S7N60C3DS9A 633906