HGT1S20N35G3VLS

HGT1S20N35G3VLS Datasheet

HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS

Part	Datasheet
HGT1S20N35G3VLS	HGT1S20N35G3VLS (pdf)

PDF Datasheet Preview
November 2003 HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175oC • Ignition Energy Capable Packages COLLECTOR FLANGE JEDEC TO-220AB EMITTER COLLECTOR GATE This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching SCIS capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit. PACKAGING AVAILABILITY PACKAGE BRAND HGTP20N35G3VL T0-220AB 20N35GVL HGT1S20N35G3VL T0-262AA 20N35GVL HGT1S20N35G3VLS T0-263AB 20N35GVL NOTE When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N35G3VLS9A. The development type number for this device is TA49076. COLLECTOR FLANGE JEDEC TO-262AA EMITTER COLLECTOR GATE JEDEC TO-263AB GATE EMITTER COLLECTOR FLANGE Terminal Diagram N-CHANNEL ENHANCEMENT MODE COLLECTOR R1 GATE EMITTER Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Bkdn Voltage At 10mA, RGE = BVCER Emitter-Collector Bkdn Voltage At 10mA BVECS Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 IC25 At VGE = 5.0V, TC = +100oC .IC100 Gate-Emitter-Voltage Note VGES Inductive Switching Current At L = 2.3mH, TC = +25o C ISCIS At L = 2.3mH, TC = +150oC ISCIS Collector to Emitter Avalanche Energy At L Power Dissipation Total At TC = +25oC. = 2.3mH, +25oC EAS PD Power Dissipation Derating TC > +25oC. Operating and Storage Junction Temperature Range TJ, TSTG Maximum Lead Temperature for Soldering .TL Electrostatic Voltage at 100pF, ESD NOTE May be exceeded if IGEM is limited to 10mA. HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS 375 24 20 ±10 21 16 500 150 -40 to +175 260 6 UNITS V A mJ W/oC KV 2003 Fairchild Semiconductor Corporation Specifications HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Electrical Specifications TC = +25oC, Unless Otherwise Specified PARAMETERS Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Gate-Emitter Plateau Voltage Gate Charge Collector-Emitter Clamp Bkdn. Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Gate Series Resistance Gate-Emitter Resistance Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-Off Time-Inductive Load Inductive Use Test Thermal Resistance TEST CONDITIONS BVCES

PDF Datasheet Preview

November 2003

HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
20A, 350V N-Channel,

Logic Level, Voltage Clamping IGBTs
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175oC
• Ignition Energy Capable

Packages

COLLECTOR FLANGE

JEDEC TO-220AB EMITTER

COLLECTOR GATE

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching SCIS capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.

PACKAGING AVAILABILITY

PACKAGE

BRAND

HGTP20N35G3VL

T0-220AB
20N35GVL

HGT1S20N35G3VL

T0-262AA
20N35GVL

HGT1S20N35G3VLS

T0-263AB
20N35GVL
NOTE When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N35G3VLS9A.

The development type number for this device is TA49076.

COLLECTOR FLANGE

JEDEC TO-262AA EMITTER

COLLECTOR GATE

JEDEC TO-263AB

GATE EMITTER

COLLECTOR FLANGE

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE COLLECTOR

R1 GATE

EMITTER

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified

Collector-Emitter Bkdn Voltage At 10mA, RGE = BVCER

Emitter-Collector Bkdn Voltage At 10mA BVECS Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 IC25

At VGE = 5.0V, TC = +100oC .IC100

Gate-Emitter-Voltage Note VGES

Inductive Switching Current At L = 2.3mH, TC = +25o C ISCIS

At L = 2.3mH, TC = +150oC ISCIS

Collector to Emitter Avalanche Energy At L Power Dissipation Total At TC = +25oC.
= 2.3mH,
+25oC

EAS PD

Power Dissipation Derating TC > +25oC.

Operating and Storage Junction Temperature Range TJ, TSTG

Maximum Lead Temperature for Soldering .TL

Electrostatic Voltage at 100pF, ESD

NOTE May be exceeded if IGEM is limited to 10mA.

HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS
375 24 20 ±10 21 16 500 150 -40 to +175 260 6

UNITS V

A mJ W/oC KV
2003 Fairchild Semiconductor Corporation

Specifications HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS

Electrical Specifications TC = +25oC, Unless Otherwise Specified

PARAMETERS Collector-Emitter Breakdown Voltage

Collector-Emitter Breakdown Voltage

Gate-Emitter Plateau Voltage Gate Charge Collector-Emitter Clamp Bkdn. Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage

Gate-Emitter Threshold Voltage Gate Series Resistance Gate-Emitter Resistance Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-Off Time-Inductive Load Inductive Use Test Thermal Resistance

TEST CONDITIONS

BVCES

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived HGT1S20N35G3VLS Datasheet file may be downloaded here without warranties.

Datasheet ID: HGT1S20N35G3VLS 633905