HGTG20N60C3D

HGTG20N60C3D Datasheet

HGTG20N60C3D

Part	Datasheet
HGTG20N60C3D	HGTG20N60C3D (pdf)

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Data Sheet HGTG20N60C3D December 2001 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 TA49063 . The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49179. Ordering Information PACKAGE BRAND HGTG20N60C3D TO-247 G20N60C3D NOTE When ordering, use the entire part number. • 45A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. 108ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,417,385 4,605,948 4,430,792 4,620,211 4,443,931 4,631,564 4,466,176 4,639,754 4,516,143 4,639,762 4,532,534 4,641,162 4,587,713 4,644,637 4,682,195 4,803,533 4,684,413 4,809,045 4,694,313 4,809,047 4,717,679 4,810,665 4,743,952 4,823,176 4,783,690 4,837,606 4,794,432 4,860,080 4,801,986 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 2001 Fairchild Semiconductor Corporation HGTG20N60C3D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage BVCES Collector Current Continuous At TC = 25oC IC25 At TC = 110oC IC110 Collector Current Pulsed Note 1 ICM Gate to Emitter Voltage Continuous. VGES Gate to Emitter Voltage Pulsed VGEM Switching Safe Operating Area at TJ = 150oC Figure 2 SSOA Power Dissipation Total at TC = 25oC PD Power Dissipation Derating TC > 25oC Operating and Storage Junction Temperature Range TJ, TSTG Maximum Lead Temperature for Soldering TL Short Circuit Withstand Time Note 2 at VGE = 12V. tSC Short Circuit Withstand Time Note 2 at VGE = 10V. tSC HGTG20N60C3D 600 45 20 300 ±20 ±30 20A at 600V 164 -55 to 150 260 4 10 UNITS V W/oC oC µs µs CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Pulse width limited by maximum junction temperature. VCE PK = 360V, TJ = 125oC, RG = Electrical Specifications TC = 25oC, Unless Otherwise Specified

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Data Sheet

HGTG20N60C3D

December 2001
45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 TA49063 .

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly developmental type TA49179.
Ordering Information

PACKAGE

BRAND

HGTG20N60C3D

TO-247

G20N60C3D
NOTE When ordering, use the entire part number.
• 45A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. 108ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

Packaging

JEDEC STYLE TO-247

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,598,461
4,417,385 4,605,948
4,430,792 4,620,211
4,443,931 4,631,564
4,466,176 4,639,754
4,516,143 4,639,762
4,532,534 4,641,162
4,587,713 4,644,637
4,682,195 4,803,533
4,684,413 4,809,045
4,694,313 4,809,047
4,717,679 4,810,665
4,743,952 4,823,176
4,783,690 4,837,606
4,794,432 4,860,080
4,801,986 4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
2001 Fairchild Semiconductor Corporation

HGTG20N60C3D

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Collector to Emitter Voltage BVCES Collector Current Continuous

At TC = 25oC IC25 At TC = 110oC IC110 Collector Current Pulsed Note 1 ICM Gate to Emitter Voltage Continuous. VGES Gate to Emitter Voltage Pulsed VGEM Switching Safe Operating Area at TJ = 150oC Figure 2 SSOA Power Dissipation Total at TC = 25oC PD Power Dissipation Derating TC > 25oC Operating and Storage Junction Temperature Range TJ, TSTG Maximum Lead Temperature for Soldering TL Short Circuit Withstand Time Note 2 at VGE = 12V. tSC Short Circuit Withstand Time Note 2 at VGE = 10V. tSC

HGTG20N60C3D 600
45 20 300 ±20 ±30 20A at 600V 164 -55 to 150 260 4 10

UNITS V

W/oC
oC µs µs

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Pulse width limited by maximum junction temperature. VCE PK = 360V, TJ = 125oC, RG =

Electrical Specifications TC = 25oC, Unless Otherwise Specified

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Datasheet ID: HGTG20N60C3D 633901